SWITCHING CIRCUIT AND RF SWITCH INCLUDING THE SAME

• US 20150180470A1
• Filed: 07/01/2014
• Published: 06/25/2015
• Est. Priority Date: 12/20/2013
• Status: Active Grant

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: CHOI, Jae Hyouck, CHOI, Kyu Jin, KANG, Suk Chan, KIM, Jeong Hoon
• Granted Patent: US 9,331,690 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H03K 17/6871 the output circuit comprising more than one controlled field-effect transistor
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

Abstract

A switching circuit may include a switching circuit unit; a reference voltage unit connected between the switching circuit unit and a signal input terminal and providing a preset reference voltage; and a voltage generating unit dividing a first control voltage provided to the switching circuit unit by a preset magnitude to generate a second control voltage corresponding to the reference voltage, and providing the second control voltage to bodies of the plurality of respective switching devices.

Claims

1. A switching circuit comprising:

a switching circuit unit including a plurality of switching devices connected to each other in series;

a reference voltage unit connected between the switching circuit unit and a signal input terminal and providing a preset reference voltage; and

a voltage generating unit dividing a first control voltage provided to the switching circuit unit by a preset magnitude to generate a second control voltage corresponding to the reference voltage, and providing the second control voltage to bodies of the plurality of respective switching devices.

2. The switching circuit of claim 1, further comprising:

a plurality of gate resistors respectively connected between respective control terminals of the plurality of switching devices and a common control terminal,

wherein the plurality of switching devices respectively receive the first control voltage through the plurality of gate resistors.

3. The switching circuit of claim 1, further comprising:

a plurality of body resistors respectively connected between the respective bodies of the plurality switching devices and a common body terminal,

wherein the plurality of switching devices respectively receive the second control voltage through the plurality of body resistors.

4. The switching circuit of claim 1, wherein the reference voltage unit includes at least one resistor element.

5. The switching circuit of claim 1, wherein the voltage generating unit includes first and second resistor elements connected to each other in series and divides the first control voltage by resistance values of the first and second resistor elements to generate the second control voltage.

6. The switching circuit of claim 1, wherein the reference voltage unit receives the second control voltage from the voltage generating unit to set the reference voltage.

7. The switching circuit of claim 1, wherein each of the plurality of switching devices is a metal oxide silicon field effect transistor (MOSFET) and the MOSFET has a gate thickness of 2.2 nm or less.

8. A RF (Radio Frequency) switch comprising:

a common port connected to an antenna to transmit and receive a high frequency signal;

a first switching unit having a plurality of first body contact type switching devices connected to each other in series between the common port and a first port;

a second switching unit having a plurality of second body contact type switching devices connected to each other in series between the common port and a second port;

a first reference voltage unit disposed between the first switching unit and the first port to provide a first reference voltage; and

a second reference voltage unit disposed between the second switching unit and the second port to provide a second reference voltage,

wherein the first switching unit divides a voltage received from a first common control terminal of the plurality of first body contact type switching devices by a resistance value preset in such a manner that a voltage difference between the first reference voltage and the voltage received from the first common control terminal is not present, to thereby provide the divided voltage to a first common body terminal of the plurality of first body contact type switching devices, and

the second switching unit divides a voltage received from a second common control terminal of the plurality of second body contact type switching devices by a resistance value preset in such a manner that a voltage difference between the second reference voltage and the voltage received from the second common control terminal is not present, to thereby provide the divided voltage to a second common body terminal of the plurality of second body contact type switching devices.

9. The RF switch of claim 8, wherein the first switching unit further includes a first voltage generating unit connected between the first common control terminal and the first common body terminal, and

the second switching unit further includes a second voltage generating unit connected between the second common control terminal and the second common body terminal.

10. The RF switch of claim 9, wherein the first voltage generating unit includes first and second resistor elements connected to each other in series and divides the voltage received from the first common control terminal by resistance values of the first and second resistor elements to thereby provide the divided voltage to the first common body terminal, and

the second voltage generating unit includes third and fourth resistor elements connected to each other in series and divides the voltage received from the second common control terminal by resistance values of the third and fourth resistor elements to thereby provide the divided voltage to the second common body terminal.

11. The RF switch of claim 8, wherein each of the first and second reference voltage units includes at least one resistor element.

12. The RF switch of claim 9, wherein the first reference voltage unit receives a voltage output from the first voltage generating unit to set the first reference voltage, and

the second reference voltage unit receives a voltage output from the second voltage generating unit to set the second reference voltage.

13. The RF switch of claim 8, further comprising:

a first shunting unit connected between the second port and the second switching unit to allow or block a signal transfer path between the second port and a ground; and

a second shunting unit connected between the first port and the first switching unit to allow or block a signal transfer path between the first port and a ground.

14. The RF switch of claim 8, wherein each of the plurality of first and second body contact type switching devices is a metal oxide silicon field effect transistor (MOSFET) and the MOSFET has a gate thickness of 2.2 nm or less.