IMAGE SENSOR AND IMAGE PROCESSING SYSTEM
First Claim
1. An image sensor, comprising:
- a Complementary Metal Oxide Semiconductor (CMOS) photosensitive array, a row selection circuit, a column selection circuit and a control signal conversion circuit,wherein the CMOS photosensitive array is adapted for converting optical signals to electrical signals;
wherein the control signal conversion circuit is adapted for converting a first set of control signals to a second set of control signals, the first set of control signals are adapted for driving a Charge-Coupled Device (CCD) photosensitive array and comprise at least a vertical transfer signal, a horizontal transfer signal, an electronic shutter signal and a readout clock signal, and the second set of control signals comprises at least a column address signal, a row reset control signal and a row readout control signal;
wherein the row selection circuit is adapted for receiving the row reset control signal and the row readout control signal, generating a row reset signal according to the row reset control signal, and generating a row readout signal according to the row readout control signal, wherein the row reset signal is adapted for controlling a reset operation of each row of the CMOS photosensitive array, and the row readout signal is adapted for controlling a readout operation of each row of the CMOS photosensitive array; and
wherein the column selection circuit is adapted for receiving the column address signal, performing a column strobe operation on the CMOS photosensitive array under control of the column address signal, and outputting a column readout signal.
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Accused Products
Abstract
An image sensor and an image processing system. The image sensor comprises: a CMOS photosensitive array used for converting an optical signal into an electrical signal; a control signal conversion circuit used for converting into a second control signal a first control signal for driving a CCD photosensitive array to operate, the first control signal at least comprising a vertical transfer signal, a horizontal transfer signal, an electronic shutter signal and a read-out clock signal, and the second control signal at least comprising a column address signal, a row reset control signal and a row read-out control signal; a row selection circuit used for generating a row reset signal according to the row reset control signal and generating a row read-out signal according to the row read-out control signal; and a column selection circuit used for conducting column gating on the CMOS photosensitive array under the control of the column address signal and outputting a column read-out signal. The technical solution of the present invention achieves the compatibility substitution of a CCD image sensor and a CMOS image sensor.
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Citations
10 Claims
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1. An image sensor, comprising:
- a Complementary Metal Oxide Semiconductor (CMOS) photosensitive array, a row selection circuit, a column selection circuit and a control signal conversion circuit,
wherein the CMOS photosensitive array is adapted for converting optical signals to electrical signals; wherein the control signal conversion circuit is adapted for converting a first set of control signals to a second set of control signals, the first set of control signals are adapted for driving a Charge-Coupled Device (CCD) photosensitive array and comprise at least a vertical transfer signal, a horizontal transfer signal, an electronic shutter signal and a readout clock signal, and the second set of control signals comprises at least a column address signal, a row reset control signal and a row readout control signal; wherein the row selection circuit is adapted for receiving the row reset control signal and the row readout control signal, generating a row reset signal according to the row reset control signal, and generating a row readout signal according to the row readout control signal, wherein the row reset signal is adapted for controlling a reset operation of each row of the CMOS photosensitive array, and the row readout signal is adapted for controlling a readout operation of each row of the CMOS photosensitive array; and wherein the column selection circuit is adapted for receiving the column address signal, performing a column strobe operation on the CMOS photosensitive array under control of the column address signal, and outputting a column readout signal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
- a Complementary Metal Oxide Semiconductor (CMOS) photosensitive array, a row selection circuit, a column selection circuit and a control signal conversion circuit,
Specification