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FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM

  • US 20150184294A1
  • Filed: 03/16/2015
  • Published: 07/02/2015
  • Est. Priority Date: 12/25/2009
  • Status: Abandoned Application
First Claim
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1. A film deposition apparatus comprising:

  • a vacuum chamber having a ceiling that includes a first ceiling surface and a second ceiling surface lower than the first ceiling surface;

    a turntable, rotatably provided inside the vacuum chamber, and configured to support a substrate placed thereon to oppose the ceiling;

    a first reaction gas supply unit configured to supply a first reaction gas to a first process region between the turntable and the first ceiling surface;

    a first separation gas supply unit configured to supply a first separation gas to a first separation region between the turntable and the second ceiling surface;

    a second reaction gas supply unit configured to supply a second reaction gas to a second process region between the turntable and the first ceiling surface;

    a driving unit configured to rotate the turntable in a rotating direction within the vacuum chamber so that the substrate sequentially passes the first process region, the first separation region, and the second process region; and

    a control unit configured to control the driving unit to rotate the turntable at a rotational speed in a range of 100 rpm to 240 rpm, and to control the first reaction gas supply unit, the first separation gas supply unit, and the second reaction gas supply unit to supply the respective gases,wherein the driving unit rotates the turntable to move the substrate from the first process region to the second process region via the first separation region before a thickness of a film formed on the substrate by adsorption of the first reaction gas in the first process region reaches a saturated thickness, and to move the substrate from the second process region to an outside of the second process region before migration of deposits formed on the film by adsorption of the second reaction gas in the second process region occurs due to crystallization.

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