HEAT-FLUX MEASURING METHOD, SUBSTRATE PROCESSING SYSTEM, AND HEAT-FLUX MEASURING MEMBER
First Claim
1. A heat-flux measuring method for measuring an ion flux of plasma generated in a substrate processing chamber using a heat flux, the method comprising:
- exposing a heat-flux measuring member having a structure in which a first layer, a second layer and a third layer are stacked in a thickness direction sequentially to the plasma, the second layer being made of a material different from a material of each of the first layer and the third layer;
irradiating a low coherent light to the heat-flux measuring member in the thickness direction of the structure;
measuring a first length of a first optical path in which the low-coherent light reciprocates in the first layer along the thickness direction, and a second length of a second optical path in which the low-coherent light reciprocates in the third layer along the thickness direction, using optical interference of reflected lights of the irradiated low-coherent light reflected from the heat-flux measuring member;
providing data representing relationships between temperatures of the first layer and a lengths of an optical path in the first layer and between temperatures of the third layer and lengths of an optical path in the third layer;
obtaining current temperatures of the first layer and the third layer based on the first length, the second length and the data; and
calculating the heat flux flowing through the heat-flux measuring member based on the obtained temperatures, and a thickness and a thermal conductivity of the second layer.
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Accused Products
Abstract
In a heat-flux measuring method for measuring an ion flux of plasma generated in a substrate processing chamber using a heat flux, a heat-flux measuring member is exposed to the plasma and irradiatated with a low coherent light. The heat-flux measuring member has a three-layered structure in which a first length and a second length of optical paths of the low-coherent light in the first layer and the third layer are measured using optical interference of reflected lights from the heat-flux measuring member. Current temperatures of the first layer and the third layer are obtained based on the measured first length, the measured second length, and data representing thermal-optical path length relationship. A heat flux flowing through the heat-flux measuring member is calculated based on the obtained temperatures, and a thickness and a thermal conductivity of the second layer.
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Citations
26 Claims
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1. A heat-flux measuring method for measuring an ion flux of plasma generated in a substrate processing chamber using a heat flux, the method comprising:
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exposing a heat-flux measuring member having a structure in which a first layer, a second layer and a third layer are stacked in a thickness direction sequentially to the plasma, the second layer being made of a material different from a material of each of the first layer and the third layer; irradiating a low coherent light to the heat-flux measuring member in the thickness direction of the structure; measuring a first length of a first optical path in which the low-coherent light reciprocates in the first layer along the thickness direction, and a second length of a second optical path in which the low-coherent light reciprocates in the third layer along the thickness direction, using optical interference of reflected lights of the irradiated low-coherent light reflected from the heat-flux measuring member; providing data representing relationships between temperatures of the first layer and a lengths of an optical path in the first layer and between temperatures of the third layer and lengths of an optical path in the third layer; obtaining current temperatures of the first layer and the third layer based on the first length, the second length and the data; and calculating the heat flux flowing through the heat-flux measuring member based on the obtained temperatures, and a thickness and a thermal conductivity of the second layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A substrate processing system comprising:
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a substrate processing chamber in which a plasma process is performed on a substrate accommodated therein; a heat-flux measuring member having a structure in which a first layer, a second layer and a third layer are stacked in a thickness direction sequentially, the second layer being made of a material different from a material of each of the first layer and the third layer, the heat-flux measuring member being disposed such that at least one of surfaces of the first layer and the third layer is exposed to plasma generated in the substrate processing chamber; and a heat-flux measuring device configured to measure an ion flux of the plasma generated in the substrate processing chamber using a heat flux, wherein the heat-flux measuring device includes; an optical system configured to irradiate to the heat-flux measuring member a low-coherent light in the thickness direction of the structure and receive reflected lights of the low-coherent light reflected from the heat-flux measuring member when the low-coherent light is irradiated to the heat-flux measuring member; and an analysis unit configured to calculate the heat flux flowing through the heat-flux measuring member using optical interference of the reflected lights, and wherein the analysis unit measures a first length of a first optical path in which the low-coherent light reciprocates in the first layer along the thickness direction, and a second length of a second optical path in which the low-coherent light reciprocates in the third layer along the thickness direction, obtains current temperatures of the first layer and the third layer based on the first length, the second length and data representing relationships between temperatures of the first layer and a lengths of an optical path in the first layer and between temperatures of the third layer and lengths of an optical path in the third layer, and calculates the heat flux flowing through the heat-flux measuring member based on the obtained temperatures, and a thickness and a thermal conductivity of the second layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A heat-flux measuring member to be disposed in a substrate processing apparatus for generating plasma, the heat-flux measuring member comprising:
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a first layer that is low-coherent light transmittable; a second layer stacked on the first layer; and a third layer that is stacked on the second layer and low-coherent light transmittable, wherein the second layer is made of a material different from a material of each of the first layer and the third layer. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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Specification