FIN CONTACTED ELECTROSTATIC DISCHARGE (ESD) DEVICES WITH IMPROVED HEAT DISTRIBUTION
First Claim
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1. A method comprising:
- forming a plurality of fins on a substrate which is aligned with at least one well region in the substrate; and
forming at least one electrostatic discharge (ESD) device spanning two or more of the plurality of fins, wherein the forming of the ESD device comprises;
forming an epitaxial material spanning the two or more of the plurality of fins; and
forming one or more contacts on the epitaxial material.
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Abstract
Fin contacted electrostatic discharge (ESD) devices with improved heat distribution and methods of manufacture are disclosed. The method includes forming a plurality of fins on a substrate which is aligned with at least one well region in the substrate. The method further includes forming at least one electrostatic discharge (ESD) device spanning two or more of the plurality of fins. The forming of the ESD device includes forming an epitaxial material spanning the two or more of the plurality of fins and forming one or more contacts on the epitaxial material.
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Citations
20 Claims
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1. A method comprising:
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forming a plurality of fins on a substrate which is aligned with at least one well region in the substrate; and forming at least one electrostatic discharge (ESD) device spanning two or more of the plurality of fins, wherein the forming of the ESD device comprises; forming an epitaxial material spanning the two or more of the plurality of fins; and forming one or more contacts on the epitaxial material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method comprising:
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forming at least one well region in a substrate; forming a plurality of fins over the at least one well region; forming a plurality of ESD devices spanning sets of the plurality of fins, the forming of the plurality of ESD devices comprises; growing epitaxial material on the sets of the plurality of fins; and forming contacts on the epitaxial material; forming metal gate structures spanning the plurality of fins and separating each of the plurality of ESD devices along lengths of the sets of the plurality of fins; and forming shallow trench isolation structures within the at least one well region and between each of the plurality of fins. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A structure, comprising:
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a substrate; a well implant in the substrate; a set of P+ fins on the well; a set of N+ fins on the well; a plurality of shallow trench isolation (STI) structures formed in the substrate, separating the N+ fins and the P+ fins; and at least one electrostatic discharge (ESD) device spanning two or more of the set of P+ fins or set of N+ fins.
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Specification