Method for Manufacturing a Semiconductor Device and a Semiconductor Device
First Claim
1. A method of forming a semiconductor device comprising forming a transistor in a semiconductor substrate having a main surface, the method further comprising:
- forming a source region and a drain region;
forming a channel region and a drift zone arranged between the source region and the drain region, the source region and the drain region being arranged along a first direction parallel to the main surface;
forming gate trenches and a gate electrode in the gate trenches, the gate trenches having a distance corresponding to a width d1 of the channel region, the width d1 fulfilling;
d1≦
2*ld, where ld denotes a length of a depletion zone formed at an interface between the channel region and a gate dielectric adjacent to the gate electrode; and
forming an auxiliary trench in the main surface, the auxiliary trench extending in a second direction intersecting the first direction, the source region being formed using a doping method that introduces dopants via a sidewall of the auxiliary trench.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device is formed by forming: a transistor in a semiconductor substrate having a main surface; a source region and a drain region; and a channel region and a drift zone between the source region and the drain region. The source and drain regions are arranged along a first direction parallel to the main surface. Gate trenches and a gate electrode are formed in the gate trenches. The gate trenches have a distance corresponding to a width d1 of the channel region, where d1≦2*ld and ld denotes a length of a depletion zone formed at an interface between the channel region and a gate dielectric adjacent to the gate electrode. An auxiliary trench formed in the main surface extends in a second direction intersecting the first direction. The source region is formed using a doping method that introduces dopants via a sidewall of the auxiliary trench.
-
Citations
20 Claims
-
1. A method of forming a semiconductor device comprising forming a transistor in a semiconductor substrate having a main surface, the method further comprising:
-
forming a source region and a drain region; forming a channel region and a drift zone arranged between the source region and the drain region, the source region and the drain region being arranged along a first direction parallel to the main surface; forming gate trenches and a gate electrode in the gate trenches, the gate trenches having a distance corresponding to a width d1 of the channel region, the width d1 fulfilling;
d1≦
2*ld, where ld denotes a length of a depletion zone formed at an interface between the channel region and a gate dielectric adjacent to the gate electrode; andforming an auxiliary trench in the main surface, the auxiliary trench extending in a second direction intersecting the first direction, the source region being formed using a doping method that introduces dopants via a sidewall of the auxiliary trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A semiconductor device comprising a transistor in a semiconductor substrate having a main surface, the transistor comprising:
-
source regions and drain regions, each of the source regions and the drain regions being arranged at the main surface; channel regions between the source regions and the drain regions; gate trenches in the main surface, disposed between adjacent ones of the channel regions; gate electrodes in gate trenches; and body contact regions at the main surface, the body contact regions contacting the channel regions, wherein the source regions and the body contact regions are alternatingly disposed along a second direction intersecting the first direction. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification