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SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES

  • US 20150187763A1
  • Filed: 09/18/2014
  • Published: 07/02/2015
  • Est. Priority Date: 12/27/2013
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a substrate comprising first through fourth areas;

    first through fourth gate insulating layers on the first through fourth areas of the substrate, respectively;

    first through fourth work function layers on the first through fourth gate insulating layers, respectively; and

    first through fourth gate metals on the first through fourth work function layers, respectively,wherein first and second nitrogen concentrations of the first and second gate insulating layers, respectively, are higher than third and fourth nitrogen concentrations of the third and fourth gate insulating layers, respectively, andwherein first and second thicknesses of the first and third gate insulating layers, respectively, are thicker than third and fourth thicknesses of the second and fourth gate insulating layers, respectively.

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