SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES
First Claim
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1. A semiconductor device comprising:
- a substrate comprising first through fourth areas;
first through fourth gate insulating layers on the first through fourth areas of the substrate, respectively;
first through fourth work function layers on the first through fourth gate insulating layers, respectively; and
first through fourth gate metals on the first through fourth work function layers, respectively,wherein first and second nitrogen concentrations of the first and second gate insulating layers, respectively, are higher than third and fourth nitrogen concentrations of the third and fourth gate insulating layers, respectively, andwherein first and second thicknesses of the first and third gate insulating layers, respectively, are thicker than third and fourth thicknesses of the second and fourth gate insulating layers, respectively.
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Abstract
Semiconductor devices are provided. A semiconductor device includes a substrate including first through fourth areas. Moreover, first through fourth gate insulating layers are on the first through fourth areas, respectively. Amounts of work function control materials in the first through fourth gate insulating layers, nitrogen concentrations in the first through fourth gate insulating layers, and/or thicknesses of the first through fourth gate insulating layers vary among the first through fourth gate insulating layers. Methods for fabricating semiconductor devices are also provided.
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Citations
30 Claims
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1. A semiconductor device comprising:
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a substrate comprising first through fourth areas; first through fourth gate insulating layers on the first through fourth areas of the substrate, respectively; first through fourth work function layers on the first through fourth gate insulating layers, respectively; and first through fourth gate metals on the first through fourth work function layers, respectively, wherein first and second nitrogen concentrations of the first and second gate insulating layers, respectively, are higher than third and fourth nitrogen concentrations of the third and fourth gate insulating layers, respectively, and wherein first and second thicknesses of the first and third gate insulating layers, respectively, are thicker than third and fourth thicknesses of the second and fourth gate insulating layers, respectively. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15-23. -23. (canceled)
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24. A semiconductor device comprising:
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a substrate comprising first through fourth areas; first through fourth gate insulating layers on the first through fourth areas, respectively; first through fourth work function layers on the first through fourth gate insulating layers, respectively; and first through fourth gate metals on the first through fourth work function layers, respectively, wherein the first and second gate insulating layers, but not the third and fourth gate insulating layers, comprise nitrogen, and wherein the first and third gate insulating materials comprise different first and second amounts of a work function control material, respectively.
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25. (canceled)
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26. A semiconductor device comprising:
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a substrate comprising first through fourth areas thereof, wherein the second area is between the first and third areas, and wherein the third area is between the second and fourth areas; and first through fourth transistors on the first through fourth areas of the substrate, respectively, the first through fourth transistors comprising first through fourth gate insulating layers, respectively, and the first gate insulating layer comprising a first amount of a work function control material that is different from a second amount of the work function control material that is in one of the second through fourth gate insulating layers. - View Dependent Claims (27, 28, 29, 30)
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Specification