SEMICONDUCTOR DEVICE

• US 20150187814A1
• Filed: 12/22/2014
• Published: 07/02/2015
• Est. Priority Date: 12/26/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyairi, Hidekazu, Sasagawa, Shinya
• Granted Patent: US 9,466,615 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 23/3157 Partial encapsulation or coating mask layer used as insulation layer H01L21/31
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/16 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/26 including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 , e.g. alloys
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 12/0335 Making a connection between the transistor and the capacitor, e.g. plug
• CPC Class Codes: H10B 12/05 Making the transistor
• CPC Class Codes: H10B 12/312 with a bit line higher than the capacitor

Abstract

A semiconductor device that is suitable for miniaturization is provided. A semiconductor device including a first element, a first insulator over the first element, a first barrier film over the first insulator, a first conductor over the first barrier film, a second barrier film over the first conductor, a second insulator over the second barrier film, and a semiconductor over the second insulator is provided. The first conductor is surrounded by the first barrier film and the second barrier film.

Claims

1. A semiconductor device comprising:

a first transistor;

a barrier film over the first transistor; and

a second transistor comprising;

a first electrode in contact with the barrier film;

an oxide semiconductor layer over the first electrode;

a source electrode or a drain electrode connected to the oxide semiconductor layer; and

a second electrode over the first electrode,

wherein the source electrode or the drain electrode is in an opening which is in the oxide semiconductor layer and reaches the first transistor, and

wherein the first electrode is surrounded by the barrier film.

2. The semiconductor device according to claim 1, wherein the opening reaches a gate electrode of the first transistor.

3. The semiconductor device according to claim 1, wherein the barrier film comprises a first film in contact with side surfaces and a bottom surface of the first electrode and a second film in contact with a top surface of the first electrode.

4. The semiconductor device according to claim 1, wherein the barrier film comprises aluminum oxide.

5. The semiconductor device according to claim 1, further comprising an insulating layer containing excess oxygen between the barrier film and the oxide semiconductor layer.

6. The semiconductor device according to claim 1, wherein the first transistor comprises a silicon semiconductor.

7. A semiconductor device comprising:

a first transistor;

a first barrier film over the first transistor;

a second transistor comprising;

a first electrode in contact with the first barrier film;

an oxide semiconductor layer over the first electrode;

a source electrode or a drain electrode connected to the oxide semiconductor layer; and

a second electrode over the first electrode; and

a second barrier film over and in contact with the second electrode and the oxide semiconductor layer,

wherein the source electrode or the drain electrode is in an opening which is in the oxide semiconductor layer and reaches the first transistor, and

wherein the first electrode is surrounded by the first barrier film.

8. The semiconductor device according to claim 7, wherein the opening reaches a gate electrode of the first transistor.

9. The semiconductor device according to claim 7, wherein the first barrier film comprises a first film in contact with side surfaces and a bottom surface of the first electrode and a second film in contact with a top surface of the first electrode.

10. The semiconductor device according to claim 7, wherein the first barrier film and the second barrier film comprise aluminum oxide.

11. The semiconductor device according to claim 7, further comprising an insulating layer containing excess oxygen between the first barrier film and the oxide semiconductor layer.

12. The semiconductor device according to claim 7, wherein the first transistor comprises a silicon semiconductor.

13. A semiconductor device comprising:

a first transistor;

a first barrier film over the first transistor;

a second transistor comprising;

a first electrode in contact with the first barrier film;

an oxide semiconductor layer over the first electrode;

a source electrode or a drain electrode connected to the oxide semiconductor layer; and

a second electrode over the first electrode;

a second barrier film over and in contact with the second electrode and the oxide semiconductor layer; and

a capacitor over the second barrier film,

wherein the source electrode or the drain electrode is in an opening which is in the oxide semiconductor layer and reaches the first transistor and the capacitor, and

wherein the first electrode is surrounded by the first barrier film.

14. The semiconductor device according to claim 13, wherein the opening reaches a gate electrode of the first transistor.

15. The semiconductor device according to claim 13, wherein the first barrier film comprises a first film in contact with side surfaces and a bottom surface of the first electrode and a second film in contact with a top surface of the first electrode.

16. The semiconductor device according to claim 13, wherein the first barrier film and the second barrier film comprise aluminum oxide.

17. The semiconductor device according to claim 13, further comprising an insulating layer containing excess oxygen between the first barrier film and the oxide semiconductor layer.

18. The semiconductor device according to claim 13, wherein the first transistor comprises a silicon semiconductor.