SEMICONDUCTOR DEVICE
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Accused Products
Abstract
A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
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Citations
22 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a transistor comprising a semiconductor film over a substrate; a pixel portion over the substrate; a first light-transmitting conductive film over the substrate in the pixel portion; a first insulating film over the semiconductor film and the first light-transmitting conductive film, the first insulating film comprising an opening over the first light-transmitting conductive film in the pixel portion; a second insulating film over the first insulating film and the first light-transmitting conductive film; a second light-transmitting conductive film over the second insulating film in the pixel portion; and an alignment film over the second light-transmitting conductive film, the alignment film comprising a first alignment region, wherein the first alignment region and the opening overlap each other, wherein in the first alignment region, an angle between a surface of the substrate and a surface of the first alignment region is less than or equal to 45°
, andwherein the semiconductor film is light-transmitting. - View Dependent Claims (14)
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3. A semiconductor device comprising:
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a first insulating film over a substrate; a transistor over the substrate, the transistor comprising a semiconductor film, wherein the semiconductor film overlaps the first insulating film; a pixel portion over the substrate; a first light-transmitting conductive film over the first insulating film in the pixel portion; a second insulating film over the semiconductor film and the first light-transmitting conductive film, the second insulating film comprising an opening over the first light-transmitting conductive film in the pixel portion; a third insulating film over the second insulating film and the first light-transmitting conductive film; a second light-transmitting conductive film over the third insulating film in the pixel portion; and a planarization film over the second light-transmitting conductive film, wherein the planarization film and the opening overlap each other, and wherein each of the semiconductor film and the first light-transmitting conductive film is light-transmitting. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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15. A semiconductor device comprising:
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a first insulating film over a substrate; a transistor over the substrate, the transistor comprising a semiconductor film, wherein the semiconductor film overlaps the first insulating film; a pixel portion over the substrate; a first light-transmitting conductive film over the first insulating film in the pixel portion; a second insulating film over the semiconductor film and the first light-transmitting conductive film, the second insulating film comprising an opening over the first light-transmitting conductive film in the pixel portion; a third insulating film over the second insulating film and the first light-transmitting conductive film; a second light-transmitting conductive film over the third insulating film in the pixel portion; and a planarization film over the second light-transmitting conductive film, wherein the planarization film and the opening overlap each other, wherein the semiconductor film and the first light-transmitting conductive film is light-transmitting, wherein the first insulating film comprises a first gate insulating film and a second gate insulating film, wherein the second gate insulating film is over the first gate insulating film, and wherein the second gate insulating film is capable of oxygen release. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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Specification