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Low Sheet Resistance GaN Channel on Si Substrates Using InAlN and AlGaN Bi-Layer Capping Stack

  • US 20150187924A1
  • Filed: 12/26/2013
  • Published: 07/02/2015
  • Est. Priority Date: 12/26/2013
  • Status: Active Grant
First Claim
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1. A method to form transistor layers comprising:

  • forming a GaN channel layer of GaN material on a top surface of a substrate;

    forming a bi-layer capping stack on a top surface of the GaN channel layer, wherein forming the bi-layer capping stack includes;

    forming a lower capping AlGaN layer of AlGaN material on a top surface of an AlN layer formed on the top surface of the GaN channel layer; and

    forming an upper capping AlInN layer of AlInN material on a top surface of the AlGaN material.

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