Light-Emitting Diode and Fabrication Method Thereof

• US 20150187990A1
• Filed: 03/10/2015
• Published: 07/02/2015
• Est. Priority Date: 11/08/2012
• Status: Active Grant

• Current Assignee: Quanzhou Sanan Semiconductor Technology Co., Ltd. (Sanan Optoelectronics Company Limited)
• Original Assignee: Xiamen Sanan Optoelectronics Technology Company Limited (Sanan Optoelectronics Company Limited)
• Inventors: YIN, LINGFENG, LIN, SUHUI, ZHENG, JIANSEN, LIU, CHUANGUI, OU, YIDE, WANG, QING
• Granted Patent: US 9,337,384 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer, including three structure layers; a second metal barrier layer over the adhesive layer with alternating second current spreading layers and metal barrier layers; and a metal electrode layer over the second metal barrier layer.

Claims

1. A light-emitting diode comprising:

a substrate;

a light-emitting epitaxial layer formed over the substrate;

a first current spreading layer over the light-emitting epitaxial layer;

an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer;

wherein the adhesive layer includes;

a first layer including a second current spreading layers;

a second layer including alternating the second current spreading layers and a first metal barrier layers; and

a third layer including the first metal barrier layers;

a second metal barrier layer over the adhesive layer; and

a metal electrode layer over the second metal barrier layer.

2. The light-emitting diode of claim 1, wherein the first current spreading layer has a thickness of about 500-5000 Å

.

3. The light-emitting diode of claim 1, wherein the first layer has a thickness of about 100-800 Å

.

4. The light-emitting diode of claim 1, wherein the second layer has a thickness of about 50-200 Å

.

5. The light-emitting diode of claim 1, wherein the third layer has a thickness of about 100-500 Å

.

6. The light-emitting diode of claim 1, wherein the adhesive layer comprises about 6-50 alternating layers.

7. The light-emitting diode of claim 1, wherein the second current spreading layer is composed of a same material as the first current spreading layer.

8. A method of fabricating a light-emitting diode, comprising:

growing a light-emitting epitaxial layer over a substrate;

forming a first current spreading layer over the light-emitting epitaxial layer;

forming an adhesive layer with alternating a second current spreading layers and a first metal barrier layers over the first current spreading layer;

wherein the adhesive layer includes;

a first layer including a second current spreading layers;

a second layer including alternating the second current spreading layers and a first metal barrier layers; and

a third layer including the first metal barrier layers;

forming a second metal barrier layer over the first metal barrier layer;

forming a metal electrode layer over the second metal barrier layer; and

performing an annealing heat treatment.

9. The method of claim 8, wherein the adhesive layer is fabricated using magnetron sputtering.

10. The method of claim 8, wherein the first layer is formed with a deposition rate of about 0.1-1 Å

/s and has a thickness of about 100-800 Å

.

11. The method of claim 8, wherein the second layer is formed with a deposition rate of about 0.1-0.5 Å

/s and has a thickness of about 50-200 Å

.

12. The method of claim 8, wherein the third layer is formed with a deposition rate of about 0.1-1 Å

/s and has a thickness of about 100-500 Å

.

13. The method of claim 8, wherein the annealing heat treatment is at a temperature of about 200-400°

C.

14. A light-emitting system comprising a plurality of light-emitting diode, each light-emitting diode including:

a substrate;

a light-emitting epitaxial layer formed over the substrate;

a first current spreading layer over the light-emitting epitaxial layer;

an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer;

wherein the adhesive layer includes;

a first layer including a second current spreading layers;

a second layer including alternating the second current spreading layers and a first metal barrier layers; and

a third layer including the first metal barrier layers;

a second metal barrier layer over the adhesive layer; and

a metal electrode layer over the second metal barrier layer.

15. The system of claim 14, wherein the first current spreading layer has a thickness of about 500-5000 Å

.

16. The system of claim 14, wherein the first layer has a thickness of about 100-800 Å

.

17. The system of claim 14, wherein the second layer has a thickness of about 50-200 Å

.

18. The system of claim 14, wherein the third layer has a thickness of about 100-500 Å

.

19. The system of claim 14, wherein the adhesive layer comprises about 6-50 alternating layers.

20. The system of claim 14, wherein the second current spreading layer is composed of a same material as the first current spreading layer.