ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

• US 20150188083A1
• Filed: 12/29/2014
• Published: 07/02/2015
• Est. Priority Date: 12/30/2013
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: JANG, Yi Sik
• Granted Patent: US 9,564,480 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/4958 with a multiple layer structure
• CPC Class Codes: H10K 50/125 specially adapted for multicolour light emission, e.g. for emitting white light
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/126 Shielding, e.g. light-blocking means over the TFTs
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

A method of fabricating an organic light emitting display device is discussed. The method in one example includes: sequentially forming a first metal film and a second metal film on a substrate and performing a mask procedure for the first and second metal films, to form a gate electrode, a first storage electrode and a pad in a thin film transistor region, a storage capacitor region and a pad region; forming a gate insulation film on the substrate provided with the gate electrode; forming a third storage electrode which overlaps the second storage electrode with a passivation film therebetween and is connected to the drain electrode; forming red, green and blue color filters in respective pixel regions of the substrate; and forming an organic light emitting diode on the substrate provided with the color filter.

Claims

1. A method of manufacturing an organic light emitting display device, the method comprising:

sequentially forming a first metal film and a second metal film on a substrate and performing a mask procedure for the first and second metal films, to form a gate electrode, a first storage electrode and a pad in a thin film transistor region, a storage capacitor region and a pad region, respectively;

forming a gate insulation film on the substrate provided with the gate electrode;

forming a channel layer on the gate insulation film opposite to the gate electrode;

forming an insulation film on the substrate provided with the channel layer;

forming an etch stopper disposed on the channel layer and first through third contact holes configured to exposing the gate electrode, the first storage electrode and the pad using another mask procedure;

forming a source electrode and a drain electrode, which are disposed on the substrate provided with the etch stopper, and a second storage electrode disposed on the gate insulation film opposite to the first storage electrode within the storage capacitor region;

forming a third storage electrode which overlaps the second storage electrode with a passivation film therebetween and is connected to the drain electrode;

forming red, green and blue color filters in respective pixel regions of the substrate; and

forming an organic light emitting diode which is formed on the substrate provided with the color filters and includes a first electrode electrically connected to the third storage electrode, an organic emission layer formed on the first electrode and a second electrode formed on the organic emission layer.

2. The method of claim 1, wherein the second metal film is formed from a conductive oxide semiconductor.

3. The method of claim 2, wherein the conductive oxide semiconductor is one of indium gallium zinc oxide IGZO, zinc oxide ZnO and titanium oxide TiO.

4. The method of claim 1, wherein the first metal film includes at least two metal layers.

5. The method of claim 1, wherein the first metal film is formed in a single layer which is formed from one of an alloy of molybdenum and titanium MoTi, aluminum Al, an aluminum alloy, tungsten W, copper Cu, nickel Ni, chromium Cr, molybdenum Mo, titanium Ti, platinum Pt and tantalum Ta.

6. The method of claim 1, further comprising performing a heat treatment process after the etch stopper is formed.

7. The method of claim 1, further comprising performing a heat treatment process to the etch stopper before the source and drain electrodes are formed.

8. The method of claim 1, wherein the first metal film is formed in a double layered structure configured with stacked metal layers which are each formed from one of a molybdenum-titanium alloy MoTi, aluminum Al, an aluminum alloy, tungsten W, copper Cu, nickel Ni, chromium Cr, molybdenum Mo, titanium Ti, platinum Pt and tantalum Ta.

9. The method of claim 1, wherein the gate electrode, the first storage electrode and the pad each include an upper surface layer which is formed from a conductive oxide and used as a barrier layer.

10. An organic light emitting display device comprising:

a gate electrode, a first storage electrode and a pad which are formed on a substrate corresponding to a thin film transistor region, a storage capacitor region and a pad region, respectively;

barrier layers formed on the gate electrode, the first storage electrode and the pad;

a gate insulation film formed on the substrate provided with the barrier layers;

a channel layer formed on the gate insulation film opposite to the gate electrode;

an etch stopper formed on the channel layer;

a source electrode configured to contact one end of the channel layer and one end of the etch stopper;

a drain electrode separated from the source electrode, connected to the first storage electrode through the gate insulation film and configured to contact other ends of the channel layer and the etch stopper;

a first connective portion connected to a barrier layer on the gate electrode through the gate insulation film;

a second storage electrode formed on the gate insulation film opposite to the first storage electrode;

a first pad contact layer connected to the pad through the gate insulation film;

a passivation film formed on the substrate provided with the first connective portion, the source and drain electrodes, the second storage electrode and the first pad contact layer;

a second connective portion connected to the first connective portion through the passivation film;

a third storage electrode connected to the drain electrode through the passivation film and overlapping the second storage electrode;

a second pad contact layer connected to the first pad contact layer through the passivation film;

a color filter formed in a pixel region of the substrate provided with the second connective portion, the third storage electrode and the second pad contact layer; and

an organic light emitting diode which is formed on the substrate provided with the color filter and includes a first electrode electrically connected to the third storage electrode, an organic emission layer formed on the first electrode and a second electrode formed on the organic emission layer.

11. The organic light emitting display device of claim 10, wherein the barrier layers are formed from a conductive oxide.

12. The organic light emitting display device of claim 11, wherein the conductive oxide is one of indium gallium zinc oxide IGZO, zinc oxide ZnO and titanium oxide TiO.

13. The organic light emitting display device of claim 10, wherein the gate electrode includes at least two metal layers.

14. The organic light emitting display device of claim 10, wherein gate electrode is formed in a single layer which is formed from one of an alloy of molybdenum and titanium MoTi, aluminum Al, an aluminum alloy, tungsten W, copper Cu, nickel Ni, chromium Cr, molybdenum Mo, titanium Ti, platinum Pt and tantalum Ta.

15. The organic light emitting display device of claim 10, wherein the gate electrode is formed in a double layered structure configured with stacked metal layers which are each formed from one of a molybdenum-titanium alloy MoTi, aluminum Al, an aluminum alloy, tungsten W, copper Cu, nickel Ni, chromium Cr, molybdenum Mo, titanium Ti, platinum Pt and tantalum Ta.

16. The organic light emitting display device of claim 10, the etch stopper is hardened through a heat treatment process before the source and drain electrodes are formed.

17. The organic light emitting display device of claim 10, wherein the etch stopper is hardened through a heat treatment process after the etch stopper is formed.

18. The organic light emitting display device of claim 10, wherein the first electrode is a cathode electrode and the organic light emitting display device is a bottom emission mode organic light emitting display device.