SEMICONDUCTOR DEVICE

• US 20150194376A1
• Filed: 05/24/2012
• Published: 07/09/2015
• Est. Priority Date: 05/27/2011
• Status: Active Grant

• Current Assignee: Sumitomo Bakelite Company Limited
• Original Assignee: Sumitomo Bakelite Company Limited
• Inventors: Shimobe, Yasuo, Murayama, Ryuichi, Mitote, Keiji
• Granted Patent: US 9,379,051 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C08K 2003/0806 Silver
• CPC Class Codes: C08K 3/08 Metals
• CPC Class Codes: C09J 11/04 inorganic
• CPC Class Codes: C09J 9/00 Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks C09J7/00 takes precedence
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/68377 with parts of the auxiliary support remaining in the finished device
• CPC Class Codes: H01L 2224/2741 in liquid form
• CPC Class Codes: H01L 2224/27436 Lamination of a preform, e.g. foil, sheet or layer
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29311 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29324 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/29344 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29347 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/29355 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/29364 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/29386 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/29439 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/3224 : the layer connector connecting between the body and an opposite side of the item with respect to the body
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/3226 : the layer connector connecting between the body and an opposite side of the item with respect to the body
• CPC Class Codes: H01L 2224/32501 : at the bonding interface
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 : the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/83192 : wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83862 : Heat curing
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/367 : Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3737 : Organic materials with or without a thermoconductive filler
• CPC Class Codes: H01L 23/49513 : having bonding material between chip and die pad
• CPC Class Codes: H01L 23/49579 : characterised by the materials of the lead frames or layers thereon
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49894 : Materials of the insulating layers or coatings
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/05432 : Al2O3
• CPC Class Codes: H01L 2924/05442 : SiO2
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

According to the present invention, a semiconductor having excellent yield is provided. The semiconductor device (10) of the present invention includes:

• a base material (die pad) (2), a semiconductor element(3), and an adhesive layer(1) intervening the space between the base material and the semiconductor element (3) to adhere the base material and the semiconductor element. Thermal conductive filler (8) is contained in the adhesive layer (1), and when the content of the thermal conductive filler dispersed in the whole of the adhesive layer is expressed as C,
• the content of the thermal conductive filler in the region 1 ranging from the interface of the adhesive layer at the side of the semiconductor element to the depth by 2 μm is expressed as C1, and the content of the thermal conductive filler in the region 2 ranging from the interface of the adhesive layer at the side of the base material to the depth by 2 μm is expressed as C2, the following formulae are satisfied:

C1<C, and C2<C.

Claims

1. A semiconductor device, comprising:

a base material,

a semiconductor element, and

an adhesive layer intervening the space between the base material and the semiconductor element to adhere the base material and the semiconductor element, wherein thermal conductive filler is dispersed in the adhesive layer, and

when the content of the thermal conductive filler dispersed in the whole of the adhesive layer is expressed as C,

the content of the thermal conductive filler in the region 1 ranging from the interface of the adhesive layer at the side of the semiconductor element to the depth by 2 μ

m is expressed as C1, and

the content of the thermal conductive filler in the region 2 ranging from the interface of the adhesive layer at the side of the base material to the depth by 2 μ

m is expressed as C2, the following formulae are satisfied;

C1<

C, and C2<

C.

2. The semiconductor device as set forth in claim 1, wherein the following formulae are satisfied:

0.75<

C1/C<

0.97, and 0.75<

C2/C<

0.97.

3. The semiconductor device as set forth in claim 1,

wherein the thermal conductive filler contains at least one kind of particle selected from the group consisting of silver, copper, gold, aluminum, nickel, alumina and silica.

4. The semiconductor device as set forth in claim 1, wherein the base material is a leadframe, a heat sink or a BGA substrate.

5. The semiconductor device as set forth in claim 1, wherein the semiconductor element is a power device having electric power consumption of 1.7 W or more.

6. The semiconductor device as set forth in claim 2, wherein the thermal conductive filler contains at least one kind of particle selected from the group consisting of silver, copper, gold, aluminum, nickel, alumina and silica.

7. The semiconductor device as set forth in claim 2, wherein the base material is a leadframe, a heat sink or a BGA substrate.

8. The semiconductor device as set forth in claim 3, wherein the base material is a leadframe, a heat sink or a BGA substrate.

9. The semiconductor device as set forth in claim 2, wherein the semiconductor element is a power device having electric power consumption of 1.7 W or more.

10. The semiconductor device as set forth in claim 3, wherein the semiconductor element is a power device having electric power consumption of 1.7 W or more.

11. The semiconductor device as set forth in claim 4, wherein the semiconductor element is a power device having electric power consumption of 1.7 W or more.