Method of Producing a Vertically Inhomogeneous Platinum or Gold Distribution in a Semiconductor Substrate and in a Semiconductor Device
First Claim
1. A semiconductor device having a thickness L comprising:
- a p-doped region;
an n-doped region; and
a vertically inhomogeneous heavy metal doping profile comprising a first heavy metal doping concentration greater than C1 across a first depth region of a thickness greater than L/6 and a second heavy metal doping concentration smaller than C2 across a second depth region of a thickness greater than L/6, wherein C1>
3×
C2.
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Abstract
Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.
10 Citations
10 Claims
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1. A semiconductor device having a thickness L comprising:
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a p-doped region; an n-doped region; and a vertically inhomogeneous heavy metal doping profile comprising a first heavy metal doping concentration greater than C1 across a first depth region of a thickness greater than L/6 and a second heavy metal doping concentration smaller than C2 across a second depth region of a thickness greater than L/6, wherein C1>
3×
C2. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor substrate comprising:
a semiconductor substrate of a thickness L, with a first and a second surface opposite the first surface, with a vertically inhomogeneous platinum or gold doping profile comprising a first platinum or gold doping concentration greater than C1 across a first depth region of a thickness greater than L/6 and a second platinum or gold doping concentration smaller than C2 across a second depth region of a thickness greater than L/6, wherein C1>
4×
C2.
Specification