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GATE STACK AND CONTACT STRUCTURE

  • US 20150194517A1
  • Filed: 01/03/2014
  • Published: 07/09/2015
  • Est. Priority Date: 01/03/2014
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a substrate having source and drain regions separated by a gate region;

    forming a gate electrode having a first length on the gate region;

    forming an epitaxy layer on the source and drain regions;

    forming a contact layer having a second length, longer than the first length, at least partially on the epitaxy layer; and

    forming an oxide layer on top and side surfaces of the contact layer for at least the first length.

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