GATE STACK AND CONTACT STRUCTURE
First Claim
Patent Images
1. A method comprising:
- providing a substrate having source and drain regions separated by a gate region;
forming a gate electrode having a first length on the gate region;
forming an epitaxy layer on the source and drain regions;
forming a contact layer having a second length, longer than the first length, at least partially on the epitaxy layer; and
forming an oxide layer on top and side surfaces of the contact layer for at least the first length.
3 Assignments
0 Petitions
Accused Products
Abstract
A process for fabrication of semiconductor devices, particularly FinFETs, having a low contact horizontal resistance and a resulting device are provided. Embodiments include: providing a substrate having source and drain regions separated by a gate region; forming a gate electrode having a first length on the gate region; forming an epitaxy layer on the source and drain regions; forming a contact layer having a second length, longer than the first length, at least partially on the epitaxy layer; and forming an oxide layer on top and side surfaces of the contact layer for at least the first length.
9 Citations
20 Claims
-
1. A method comprising:
-
providing a substrate having source and drain regions separated by a gate region; forming a gate electrode having a first length on the gate region; forming an epitaxy layer on the source and drain regions; forming a contact layer having a second length, longer than the first length, at least partially on the epitaxy layer; and forming an oxide layer on top and side surfaces of the contact layer for at least the first length. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A device comprising:
-
a substrate having source and drain regions separated by a gate region; a gate electrode having a first length on the gate region; an epitaxy layer on the source and drain regions; a contact layer having a second length, longer than the first length, at least partially on the epitaxy layer; and an oxide layer on top and side surfaces of the contact layer for at least the first length. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
-
17. A method comprising:
-
providing a substrate having source and drain regions separated by a gate region; forming a gate electrode having a first horizontal length on the gate region and a first height; forming an epitaxy layer on the source and drain regions; forming a shallow trench isolation (STI) region in the substrate horizontally beyond the epitaxy layer; forming a tungsten (W) contact layer having a second horizontal length, longer than the first horizontal length, and a second height, less than the first height, at least partially on the epitaxy layer, the contact layer extending horizontally over the STI region and comprising a vertical portion over the STI region; and forming an oxide layer on top and side surfaces of the contact layer for at least the first length. - View Dependent Claims (18, 19, 20)
-
Specification