Method and Structure for LED with Nano-Patterned Substrate
First Claim
1. A light-emitting diode (LED) structure, comprising:
- a bonding layer disposed over a substrate, wherein the bonding layer contains Au, AuSn, or AuIn;
a metal layer disposed over the bonding layer;
a p-type doped gallium nitride (p-GaN) layer disposed over the metal layer;
a n-type doped gallium nitride (n-GaN) layer approximate the p-GaN layer;
a multiple quantum well (MQW) structure disposed between the n-GaN layer and the p-GaN layer; and
a conductive contact disposed on the n-GaN layer;
wherein the n-GaN layer includes a rough surface with randomly distributed nano-sized dips, and wherein the conductive contact is disposed on some of the nano-sized dips of the rough surface.
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Abstract
The present disclosure provides one embodiment of a method for fabricating light-emitting diode (LED) devices. The method includes forming a nano-mask layer on a first substrate, wherein the nano-mask layer has a randomly arranged grain pattern; growing a first epitaxy semiconductor layer in the first substrate, forming a nano-composite layer; growing a number of epitaxy semiconductor layers over the nano-composite layer; bonding a second substrate to the epitaxy semiconductor layers from a first side of the epitaxy semiconductor layers; applying a radiation energy to the nano-composite layer; and separating the first substrate from the epitaxy semiconductor layers from a second side of the epitaxy semiconductor layers.
2 Citations
36 Claims
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1. A light-emitting diode (LED) structure, comprising:
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a bonding layer disposed over a substrate, wherein the bonding layer contains Au, AuSn, or AuIn; a metal layer disposed over the bonding layer; a p-type doped gallium nitride (p-GaN) layer disposed over the metal layer; a n-type doped gallium nitride (n-GaN) layer approximate the p-GaN layer; a multiple quantum well (MQW) structure disposed between the n-GaN layer and the p-GaN layer; and a conductive contact disposed on the n-GaN layer; wherein the n-GaN layer includes a rough surface with randomly distributed nano-sized dips, and wherein the conductive contact is disposed on some of the nano-sized dips of the rough surface. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A light-emitting diode (LED) structure, comprising:
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a substrate; a bonding layer disposed over the substrate, wherein the bonding layer contains Au, AuSn, or AuIn; a metal layer disposed over the bonding layer; a first doped gallium nitride layer disposed over the metal layer; a multiple quantum well (MQW) structure disposed over the first doped gallium nitride layer; a second doped gallium nitride layer disposed over the MQW structure, wherein the second doped gallium nitride layer has a roughened surface that includes a plurality of nano-sized dips; and a metal contact disposed on at least some of the nano-sized dips of the roughened surface. - View Dependent Claims (8, 14, 31, 32, 33, 34, 36)
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9-13. -13. (canceled)
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15-20. -20. (canceled)
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21. A light-emitting diode (LED) structure, comprising:
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a substrate; a bonding layer disposed over the substrate, wherein the bonding layer contains Au, AuSn, or AuIn; a metal layer disposed over the bonding layer; a first doped semiconductor layer disposed over the metal layer; a light-emitting layer disposed over the first doped semiconductor layer; a second doped semiconductor layer disposed over the light-emitting layer, wherein the first and second doped semiconductor layers have different types of conductivity, and wherein the second doped semiconductor layer includes a rough surface with a plurality of miniature-sized dips; and a metal pad disposed on some of the miniature-sized dips of the rough surface. - View Dependent Claims (22, 25, 26, 29, 35)
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23-24. -24. (canceled)
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27-28. -28. (canceled)
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30. (canceled)
Specification