STORAGE DEVICE STATE DETECTION METHOD
First Claim
1. A storage device state detection method in which an SOH or an SOC of a storage device is inferred from an internal impedance of a storage device, the method comprising:
- measuring an internal resistance of the storage device by using a signal with a first frequency at which the internal impedance of the storage device is reduced as a temperature is raised, and calculating an initial SOH or an initial SOC of the storage device from a measured value of the internal resistance;
measuring the internal impedance of the storage device by using a signal with a second frequency at which the internal impedance of the storage device is increased as a temperature is raised, and calculating an internal temperature of the storage device from a measured impedance value of the internal impedance; and
inferring the SOH or the SOC by using a calculated value of the internal temperature to correct the initial SOH or the initial SOC.
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Accused Products
Abstract
In a storage device state detection method in which the SOH or SOC of the storage device is inferred from the internal impedance of the storage device: the internal resistance of the storage device is measured by using a signal with a first frequency at which the internal impedance is reduced as a temperature is raised, and the initial SOH or initial SOC of the storage device is calculated from the measured value of the internal resistance; the internal impedance is measured by using a signal with a second frequency at which the internal impedance is increased as a temperature is raised, and the internal temperature of the storage device is calculated from the measured value of the internal impedance; and the SOH or SOC is inferred by using the calculated value of the internal temperature to correct the initial SOH or initial SOC.
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Citations
18 Claims
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1. A storage device state detection method in which an SOH or an SOC of a storage device is inferred from an internal impedance of a storage device, the method comprising:
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measuring an internal resistance of the storage device by using a signal with a first frequency at which the internal impedance of the storage device is reduced as a temperature is raised, and calculating an initial SOH or an initial SOC of the storage device from a measured value of the internal resistance; measuring the internal impedance of the storage device by using a signal with a second frequency at which the internal impedance of the storage device is increased as a temperature is raised, and calculating an internal temperature of the storage device from a measured impedance value of the internal impedance; and inferring the SOH or the SOC by using a calculated value of the internal temperature to correct the initial SOH or the initial SOC. - View Dependent Claims (4, 5, 10, 13, 16)
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2. A storage device state detection method in which an SOH or an SOC of a storage device is inferred from an internal impedance of a storage device, the method comprising:
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measuring an internal resistance of the storage device by using a signal with a first frequency at which a capacitance component of the internal impedance of the storage device becomes more dominant than an inductance component of the internal impedance, and calculating an initial SOH or an initial SOC of the storage device from a measured value of the internal resistance; measuring the internal impedance of the storage device by using a signal with a second frequency at which the inductance component of the internal impedance of the storage device becomes more dominant than the capacitance component of the internal impedance, and calculating an internal temperature of the storage device from a measured impedance value of the internal impedance; and inferring the SOH or the SOC by using a calculated value of the internal temperature to correct the initial SOH or the initial SOC. - View Dependent Claims (6, 7, 11, 14, 17)
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3. A storage device state detection method in which an SOH or an SOC of a storage device is inferred from an internal impedance of a storage device, the method comprising:
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measuring an internal resistance of the storage device by using a signal with a first frequency of 1 kHz or lower, and calculating an initial SOH or an initial SOC of the storage device from a measured value of the internal resistance; measuring the internal impedance of the storage device by using a signal with a second frequency of 10 kHz or higher, and calculating an internal temperature of the storage device from a measured value of the internal impedance; and inferring the SOH or the SOC by using a calculated value of the internal temperature to correct the initial SOH or the initial SOC. - View Dependent Claims (8, 9, 12, 15, 18)
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Specification