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METHOD OF MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE

  • US 20150200113A1
  • Filed: 12/23/2014
  • Published: 07/16/2015
  • Est. Priority Date: 01/10/2014
  • Status: Active Grant
First Claim
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1. A method of manufacturing a thin-film transistor substrate which includes a thin-film transistor, the method comprising:

  • forming a planarization layer comprising polyimide material above the thin-film transistor; and

    heating the thin-film transistor at a temperature of 240°

    C. or lower after the planarization layer is formed.

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