METHOD OF MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE
First Claim
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1. A method of manufacturing a thin-film transistor substrate which includes a thin-film transistor, the method comprising:
- forming a planarization layer comprising polyimide material above the thin-film transistor; and
heating the thin-film transistor at a temperature of 240°
C. or lower after the planarization layer is formed.
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Abstract
A method of manufacturing a thin-film transistor substrate which includes a thin-film transistor includes: forming a planarization layer comprising polyimide material above the thin-film transistor; and heating the thin-film transistor at a temperature of 240° C. or lower after the planarization layer is formed.
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Citations
7 Claims
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1. A method of manufacturing a thin-film transistor substrate which includes a thin-film transistor, the method comprising:
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forming a planarization layer comprising polyimide material above the thin-film transistor; and heating the thin-film transistor at a temperature of 240°
C. or lower after the planarization layer is formed. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification