METHOD FOR PRODUCING HYBRID SUBSTRATES, AND HYBRID SUBSTRATE

• US 20150200129A1
• Filed: 07/18/2013
• Published: 07/16/2015
• Est. Priority Date: 07/25/2012
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: Konishi, Shigeru, Kubota, Yoshihiro
• Granted Patent: US 9,837,301 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A method for producing hybrid substrates which can be incorporated into a semiconductor production line involves: forming an ion-injection region (3) by injecting ions from the surface of a silicon substrate (1); adhering the ion-injection surface of the silicon substrate and the surface of a sapphire substrate (4) to one another directly or with an insulating film (2) interposed therebetween; and then obtaining a hybrid substrate (8) having a silicon thin-film (semiconductor layer; 6) on the sapphire substrate (4), by detaching the silicon substrate (1) in the ion-injection region (3). This method is characterized in that the adhering to the silicon substrate (1) occurs after the sapphire substrate (4) is heat-treated in advance in a reducing atmosphere.

Claims

1. A method for producing a hybrid substrate comprising the steps of implanting ions into a surface of a semiconductor substrate to form an ion-implanted region, bonding the ion-implanted surface of the semiconductor substrate to a surface of a support substrate directly or via an insulating film, and separating the semiconductor substrate at the ion-implanted region, thus leaving a hybrid substrate having a semiconductor layer on the support substrate, characterized in that

the support substrate is heat treated in a reducing atmosphere prior to the step of bonding the support substrate to the semiconductor substrate.

2. The method for producing a hybrid substrate of claim 1 wherein the support substrate is heat treated at a temperature of at least 900°

C.

3. The method for producing a hybrid substrate of claim 1 wherein the support substrate is heat treated at a temperature of up to 1,100°

C.

4. The method for producing a hybrid substrate of claim 1 wherein the reducing atmosphere is hydrogen or an inert gas atmosphere containing hydrogen.

5. The method for producing a hybrid substrate of claim 1 wherein the semiconductor substrate comprises a material selected from the group consisting of silicon, silicon-germanium, silicon carbide, germanium, gallium nitride, zinc oxide, and gallium arsenide.

6. The method for producing a hybrid substrate of claim 1 wherein the support substrate comprises a material selected from the group consisting of silicon, silicon carbide, silicon nitride, sapphire, diamond, aluminum nitride, gallium nitride, zinc oxide, quartz, and borosilicate glass.

7. A hybrid substrate obtained by the method of claim 1.