SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
First Claim
1. A manufacturing method of a semiconductor device, the method comprising the steps of:
- preparing a semiconductor wafer comprising memory cells, and a chip region provided with a connection pad electrically connected to the memory cells, a passivation film having an opening being formed on at least part of the connection pad;
forming a thermosetting resin material layer on the wafer, heat treating and curing the thermosetting resin material layer at a first temperature of 100°
C. to 200°
C. or less, and forming a protective film;
preheating the semiconductor wafer having the protective film formed therein at a second temperature, and removing water on the surface of the protective film;
bias sputtering on the preheated semiconductor wafer, and partly removing the surface of the connection pad;
controlling the temperature of the semiconductor wafer which has been subjected to the bias sputtering to a third temperature of 0°
C. to 200°
C.;
sputtering a material selected from the group consisting of titanium, titanium tungsten, tantalum, and a conductive titanium compound to form a first conductive underlayer on the protective film of the semiconductor wafer controlled at the third temperature; and
forming, on at least one part of the first conductive underlayer, one element selected from a redistribution layer, an external connection electrode, a land portion of the external connection electrode, and one under-bump metal.
2 Assignments
0 Petitions
Accused Products
Abstract
A manufacturing method of a semiconductor device includes thermally curing a thermosetting resin material layer formed on a semiconductor wafer at a first temperature of 100° C. to 200° C. to form a protective film, preheating the semiconductor wafer having the protective film formed therein at a second temperature and removing water on the surface of the protective film, bias sputtering on the preheated semiconductor wafer, then controlling the temperature of the semiconductor wafer to a third temperature of not more than 200° C., and sputtering a material selected from the group consisting of Ti, TiW, Ta, and a conductive Ti compound to form a first conductive underlayer on the protective film.
28 Citations
20 Claims
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1. A manufacturing method of a semiconductor device, the method comprising the steps of:
-
preparing a semiconductor wafer comprising memory cells, and a chip region provided with a connection pad electrically connected to the memory cells, a passivation film having an opening being formed on at least part of the connection pad; forming a thermosetting resin material layer on the wafer, heat treating and curing the thermosetting resin material layer at a first temperature of 100°
C. to 200°
C. or less, and forming a protective film;preheating the semiconductor wafer having the protective film formed therein at a second temperature, and removing water on the surface of the protective film; bias sputtering on the preheated semiconductor wafer, and partly removing the surface of the connection pad; controlling the temperature of the semiconductor wafer which has been subjected to the bias sputtering to a third temperature of 0°
C. to 200°
C.;sputtering a material selected from the group consisting of titanium, titanium tungsten, tantalum, and a conductive titanium compound to form a first conductive underlayer on the protective film of the semiconductor wafer controlled at the third temperature; and forming, on at least one part of the first conductive underlayer, one element selected from a redistribution layer, an external connection electrode, a land portion of the external connection electrode, and one under-bump metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
- a semiconductor substrate provided with memory cells, a connection pad electrically connected to the memory cells, and a fuse element;
a passivation film formed by providing an opening on at least part of the semiconductor substrate;
a protective film which is buried in at least a fuse opening on the fuse element and which is formed by the use of a resin material that is thermally cured at 100°
C. to 200°
C.; and
one of a redistribution layer including a conductive underlayer made of a material selected from the group consisting of titanium, titanium tungsten, tantalum, and a conductive titanium compound provided on the semiconductor substrate via the protective film, and an external connection electrode. - View Dependent Claims (12, 13, 14, 15, 16, 17)
- a semiconductor substrate provided with memory cells, a connection pad electrically connected to the memory cells, and a fuse element;
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18. A semiconductor device comprising:
- a semiconductor substrate which is provided with memory cells and which comprises a connection pad electrically connected to the memory cells, and an electrically trimmable fuse circuit connected to the memory cells;
a passivation film formed by providing an opening on at least part of the semiconductor substrate;
a protective film which is formed on the passivation film and which is formed by the use of a resin material that is thermally cured at 100°
C. to 200°
C.; and
one of a redistribution layer including a conductive underlayer made of a material selected from the group consisting of titanium, titanium tungsten, tantalum, and a conductive titanium compound provided on the semiconductor substrate via the protective film, and an external connection electrode. - View Dependent Claims (19, 20)
- a semiconductor substrate which is provided with memory cells and which comprises a connection pad electrically connected to the memory cells, and an electrically trimmable fuse circuit connected to the memory cells;
Specification