PLASMA PROCESSING APPARATUS

• US 20150206713A1
• Filed: 01/20/2015
• Published: 07/23/2015
• Est. Priority Date: 01/20/2014
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: AMIKURA, Norihiko, SASAKI, Norikazu, SAWACHI, Atsushi
• Application Number:
  US14/600,224
• Publication Number:
  US 20150206713A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

Processing gases respectively supplied from multiple gas supply lines into a processing vessel can be switched at a high speed in a uniform manner. A plasma processing apparatus includes the processing vessel configured to perform therein a plasma process to a target substrate; and a gas inlet member including first gas discharge holes and second gas discharge holes which are alternately arranged to be adjacent to each other and respectively communicate with a first gas supply line and a second gas supply line, which are switchable. Further, the first gas discharge holes and the second gas discharge holes independently and respectively introduce a first processing gas and a second processing gas, which are respectively supplied from the first gas supply line and the second gas supply line and used in the plasma process, into the processing vessel.

Claims

1. A plasma processing apparatus comprising:

a processing vessel configured to perform therein a plasma process to a target substrate; and

a gas inlet member including first gas discharge holes and second gas discharge holes which are alternately arranged to be adjacent to each other and respectively communicate with a first gas supply line and a second gas supply line, which are switchable,

wherein the first gas discharge holes and the second gas discharge holes independently and respectively introduce a first processing gas and a second processing gas, which are respectively supplied from the first gas supply line and the second gas supply line and used in the plasma process, into the processing vessel.

2. The plasma processing apparatus of claim 1,

wherein the gas inlet member further includes a first gas diffusion room and a second gas diffusion room which are vertically overlapped with each other and configured to respectively diffuse the first processing gas and the second processing gas respectively supplied from the first gas supply line and the second gas supply line,

the first gas discharge holes and the second gas discharge holes are respectively extended from the first gas diffusion room and the second gas diffusion room, and respectively communicate with the first gas supply line and the second gas supply line via the first gas diffusion room and the second gas diffusion room, and

the second gas diffusion room is formed at a region where the first gas discharge holes extended from the first gas diffusion room are not arranged.

3. The plasma processing apparatus of claim 1,

wherein the gas inlet member has a disc shape, and

the first gas discharge holes and the second gas discharge holes are alternately arranged to be adjacent to each other along a circumference of the gas inlet member.

4. The plasma processing apparatus of claim 1,

wherein the gas inlet member has a disc shape, and

the first gas discharge holes and the second gas discharge holes are alternately arranged to be adjacent to each other along a diameter of the gas inlet member.

5. The plasma processing apparatus of claim 1,

wherein the first gas supply line and the second gas supply line are switched at a cycle of 200 msec or more to 500 msec or less.

6. The plasma processing apparatus of claim 1,

wherein the first gas supply line and the second gas supply line are switched in a state where a third processing gas different from the first processing gas and the second processing gas is supplied to both of the first gas supply line and the second gas supply line.