METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

• US 20150206736A1
• Filed: 01/21/2015
• Published: 07/23/2015
• Est. Priority Date: 01/23/2014
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: AKAE, Naonori, YOTSUTANI, Tatsuya
• Granted Patent: US 9,601,326 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45546 specially adapted for a substrate stack in the ALD reactor
• CPC Class Codes: C23C 16/45557 Pulsed pressure or control pressure
• CPC Class Codes: C23C 16/507 using external electrodes, e.g. in tunnel type reactors
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/0214 the material being a silicon oxynitride, e.g. SiON or SiON:H
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

The uniformity of the thickness of the film of a film to be formed on a substrate within a plane of the substrate can be improved. A method of manufacturing a semiconductor includes performing a cycle, a predetermined number of times, to form a film on a substrate, the cycle including non-simultaneously performing: (a) supplying a source gas to the substrate in a process chamber; (b) removing the source gas from the process chamber; (c) supplying a reactive gas having a chemical structure different from that of the source gas to the substrate in the process chamber; and (d) removing the reactive gas from the process chamber, wherein the (d) includes alternately repeating: (d-1) exhausting an inside of the process chamber to depressurize the inside of the process chamber; and (d-2) purging the inside of the process chamber using an inert gas.

Claims

1. A method of manufacturing a semiconductor device, comprising:

performing a cycle a predetermined number of times to form a film on a substrate, the cycle comprising non-simultaneously performing;

(a) supplying a source gas to the substrate in a process chamber;

(b) removing the source gas from the process chamber;

(c) supplying a reactive gas having a chemical structure different from that of the source gas to the substrate in the process chamber; and

(d) removing the reactive gas from the process chamber,

wherein the (d) comprises alternately repeating;

(d-1) exhausting an inside of the process chamber to depressurize the inside of the process chamber; and

(d-2) purging the inside of the process chamber using an inert gas.

2. The method of claim 1, wherein the (b) comprises alternately performing, a predetermined number of times:

(b-1) exhausting the inside of the process chamber to depressurize the inside of the process chamber; and

(b-2) purging the inside of the process chamber using the inert gas.

3. The method of claim 2, wherein a flow rate of the inert gas supplied in the (d-2) is greater than a flow rate of the inert gas supplied in the (b-2).

4. The method of claim 2, wherein number of times the (d-1) and (d-2) are repeated in the (d) is greater than number of times the (b-1) and (b-2) are performed in the (b)

5. The method of claim 1, wherein a deviation of an inner pressure of the process chamber per unit time in the (d) is greater than a deviation of the inner pressure of the process chamber per unit time in the (b).

6. The method of claim 1, wherein the cycle further comprises:

(e) supplying a second reactive gas having a chemical structure different from those of the source gas and the reactive gas to the substrate in the process chamber; and

(f) removing the second reactive gas from the process chamber.

14. The method of claim 1, wherein the (d) is performed after the (c) and before the (a).

15. The method of claim 1, wherein the reactive gas comprises a nitriding gas.

16. The method of claim 1, wherein the reactive gas comprises a hydrogen nitride group gas.

17. The method of claim 1, wherein the reactive gas comprises at least one selected from the group consisting of ammonia gas, hydrazine gas and diazene gas.

7. A method of manufacturing a semiconductor device, comprising:

performing a cycle a predetermined number of times to form a film on a substrate, the cycle comprising;

(a) supplying a source gas to the substrate in a process chamber;

(b) removing the source gas from the process chamber;

(c) supplying a first reactive gas having a chemical structure different from that of the source gas to the substrate in the process chamber;

(d) removing the first reactive gas from the process chamber;

(e) supplying a second reactive gas having a chemical structure different from those of the source gas and the first reactive gas to the substrate in the process chamber; and

(f) removing the second reactive gas from the process chamber,

wherein at least the (a) through (d) are non-simultaneously performed a predetermined number of times, and

the (d) comprises alternately repeating;

(d-1) exhausting an inside of the process chamber to depressurize the inside of the process chamber; and

(d-2) purging the inside of the process chamber using an inert gas.

8. The method of claim 7, wherein the (b) comprises alternately performing, a predetermined number of times:

(b-1) exhausting the inside of the process chamber to depressurize the inside of the process chamber; and

(b-2) purging the inside of the process chamber using the inert gas, and

the (f) comprises alternately performing, a predetermined number of times;

(f-1) exhausting the inside of the process chamber to depressurize the inside of the process chamber; and

(f-2) purging the inside of the process chamber using the inert gas.

9. The method of claim 8, wherein a flow rate of the inert gas in the (d-2) is greater than each flow rate of the inert gas in the (b-2) and (f-2).

10. The method of claim 8, wherein number of times the (d-1) and (d-2) are repeated in the (d) is greater than number of times the (b-1) and (b-2) are performed in the (b) and number of times the (f-1) and (f-2) are performed in the (f).

11. The method of claim 7, wherein a deviation of an inner pressure of the process chamber per unit time in the (d) is greater than deviations of the inner pressure of the process chamber per unit time in the (b) and (f).

12. The method of claim 7, wherein the (a), (b), (c), (d), (e) and (f) are performed non-simultaneously.

13. The method of claim 7, wherein the (c) and (e) are performed simultaneously and the (d) and (f) are performed simultaneously.

18. A substrate processing apparatus comprising:

a process chamber configured to accommodate a substrate;

a source gas supply system configured to supply a source gas into the process chamber;

a reactive gas supply system configured to supply a reactive gas having a chemical structure different from that of the source gas into the process chamber;

an inert gas supply system configured to supply an inert gas into the process chamber;

an exhaust system configured to exhaust an inside of the process chamber; and

a control unit configured to control the source gas supply system, the reactive gas supply system, the inert gas supply system and the exhaust system to perform a cycle, a predetermined number of times, to form a film on the substrate, the cycle comprising non-simultaneously performing;

(a) supplying the source gas to the substrate in the process chamber;

(b) removing the source gas from the process chamber;

(c) supplying the reactive gas to the substrate in the process chamber; and

(d) removing the reactive gas from the process chamber, wherein (d-1) exhausting the inside of the process chamber to depressurize the inside of the process chamber; and

(d-2) purging the inside of the process chamber using the inert gas are alternately repeated in the (d).

19. A non-transitory computer-readable recording medium causing a computer to perform a cycle, a predetermined number of times, to form a film on a substrate, the cycle comprising non-simultaneously performing:

(a) supplying a source gas to the substrate in a process chamber;

(b) removing the source gas from the process chamber;

(c) supplying a reactive gas having a chemical structure different from that of the source gas to the substrate in the process chamber; and

(d) removing the reactive gas from the process chamber,

wherein the (d) comprises alternately repeating;

(d-1) exhausting an inside of the process chamber to depressurize the inside of the process chamber; and

(d-2) purging the inside of the process chamber using an inert gas.