Semiconductor Device

• US 20150206860A1
• Filed: 01/15/2015
• Published: 07/23/2015
• Est. Priority Date: 01/17/2014
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toyota Jidoshokki
• Original Assignee: Kabushiki Kaisha Toyota Jidoshokki
• Inventors: Kontani, Kazuyoshi, Nagase, Toshiaki, Kanie, Naohito
• Granted Patent: US 9,543,281 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 23/053 the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/165 Containers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/1011 Structure
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H05K 1/0265 characterized by the lay-out of or details of the printed conductors, e.g. reinforced conductors, redundant conductors, conductors having different cross-sections
• CPC Class Codes: H05K 1/181 associated with surface mounted components
• CPC Class Codes: H05K 7/1432 specially adapted for power drive units or power converters
• CPC Class Codes: H05K 7/14322 wherein the control and power circuits of a power converter are arranged within the same casing

Abstract

A plurality of arm elements is arrayed along a first direction of a substrate. Each arm element includes a plurality of semiconductor elements connected in parallel. Each arm element is configured such that a plurality of semiconductor elements is arrayed along a second direction of the substrate which is perpendicular to the first direction and separated into a first element group and a second element group. The substrate includes a first region where the semiconductor element included in the first element group is arranged and a second region where the semiconductor element included in the second element group is arranged, and the first region and the second region are separated along the second direction. An input electrode unit and an output electrode unit are arranged along the first direction in a region provided between the first region and the second region on the substrate.

Claims

1. A semiconductor device comprising:

a substrate provided with a main circuit including a plurality of arm elements, each of the plurality of arm elements including a plurality of semiconductor elements connected in parallel;

an input electrode unit provided on the substrate and configured to supply power to the main circuit; and

an output electrode unit provided on the substrate and being connected to a midpoint between the two arm elements connected in series, wherein

the plurality of arm elements is arrayed along a first direction of the substrate,

each of the arm elements is configured with the plurality of semiconductor elements arrayed along a second direction of the substrate perpendicular to the first direction and the plurality of semiconductor elements is separated into a first element group and a second element group,

the substrate includes a first region where the semiconductor element included in the first element group is arranged and a second region where the semiconductor element included in the second element group is arranged, the first region and the second region being separated along the second direction, and

the input electrode unit and the output electrode unit are arranged along the first direction in a third region provided between the first region and the second region on the substrate.

2. The semiconductor device according to claim 1, wherein,

an input electrode is mounted on the input electrode unit, and

the input electrode has a shape of which a width in the first direction is wider than a width in the second direction.

3. The semiconductor device according to claim 2, wherein the input electrode has a rectangular shape of which a longitudinal direction is identical to the first direction.

4. The semiconductor device according to claim 1, wherein

at least a portion of the input electrode unit is included in the plurality of semiconductor elements constituting one of the aim elements and is located between the two semiconductor elements arrayed along the second direction with the third region in between, and

at least a portion of the output electrode unit is included in the plurality of semiconductor elements constituting another one of the arm elements adjoining the one of the arm elements along the first direction and is located between the semiconductor elements arrayed along the second direction with the third region in between.

5. The semiconductor device according to claim 1, wherein each of the arm elements is configured such that the number of the semiconductor elements included in the first element group and the number of the semiconductor elements included in the second element group are equal.