LIGHT-EMITTING ELEMENT DISPLAY DEVICE

• US 20150206929A1
• Filed: 01/16/2015
• Published: 07/23/2015
• Est. Priority Date: 01/17/2014
• Status: Active Grant

• Current Assignee: Japan Display Incorporated
• Original Assignee: Japan Display Incorporated
• Inventors: SATO, Toshihiro
• Granted Patent: US 9,276,051 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels

Abstract

A light-emitting element display device includes a substrate, one or a plurality of thin film transistors, a light-emitting element, a first electrode, and a second electrode. The substrate includes an insulating material. The thin film transistors are in each pixel of a display area on the substrate. The light-emitting element emits light by current flow in each pixel. The first electrode is between the substrate and the thin film transistors, and overlaps at least two of the thin film transistors when viewed in plan. The second electrode includes a conducting material, and is arranged across the first electrode from the substrate via an insulating film so as to form a capacitor together with the first electrode.

Claims

1. A light-emitting element display device comprising:

a substrate made of an insulating material;

a plurality of pixels in a display area on the substrate;

one or a plurality of thin film transistors in each of the plurality of pixels;

a light-emitting element for emitting light by current flow in each of the pixels;

a first electrode between the substrate and the thin film transistors, the first electrode overlapping with at least two of the thin film transistors in a plan view; and

a second electrode made of a conductive material, the second electrode provided on a side of the first electrode opposite to the substrate via an insulating film so as to form a capacitor together with the first electrode.

2. The light-emitting element display device according to claim 1, wherein

the first electrode spreads over two or more of the plurality of pixels.

3. The light-emitting element display device according to claim 1, wherein

the first electrode spreads over the display area.

4. The light-emitting element display device according to claim 3, wherein

the first electrode has slits, which are holes at multiple spots of the first electrode in a plan view.

5. The light-emitting element display device according to claim 1, wherein

the first electrode is coupled to a reference potential for activating the light-emitting element to emit light in each of the pixels.

6. The light-emitting element display device according to claim 1, wherein

the light-emitting element is provided with an organic layer including a light-emitting layer, an anode electrode, and a cathode electrode,

the first electrode is electrically coupled to the cathode electrode, and

the second electrode is electrically coupled to the anode electrode.

7. The light-emitting element display device according to claim 1, wherein

the thin film transistors in each of the pixels include:

a pixel transistor for controlling an applied voltage corresponding to a grayscale value;

a driver transistor for controlling light emission based on a potential applied through the pixel transistor, and

the second electrode is coupled to a gate of the driver transistor.

8. The light-emitting element display device according to claim 7, wherein

the first electrode is coupled to one of a source and a drain of the driver transistor.

9. The light-emitting element display device according to claim 1, further comprising

a third electrode made of a conductive material, the third electrode provided on a side of the second electrode opposite to the substrate via an insulating film so as to form a capacitor together with the second electrode,

wherein the third electrode is electrically coupled to the first electrode so as to form a capacitor together with the second electrode.

10. The light-emitting element display device according to claim 9, wherein

the thin film transistors each have a semiconductor layer, and

the third electrode lies at a same level as the semiconductor layer.

11. The light-emitting element display device according to claim 1, further comprising

a third electrode made of a conductive material, the third electrode provided on a side of the second electrode opposite to the substrate via an insulating film so as to form a capacitor together with the second electrode, wherein

the first electrode is coupled to a cathode electrode of the light-emitting element,

the second electrode is coupled to one of a source and a drain of the driver transistor, and

the third electrode is coupled to a gate of the driver transistor.

12. A light-emitting element display device comprising:

a substrate made of an insulating material;

a plurality of pixels in a display area on the substrate;

one or a plurality of thin film transistors in each of the plurality of pixels;

a light-emitting element provided with an organic layer including a light-emitting layer, an anode electrode, and a cathode electrode;

a first electrode between the substrate and the thin film transistors, the first electrode overlapping with at least two of the thin film transistors in a plan view; and

a second electrode provided on a side of the first electrode opposite to the substrate via an insulating film, and being opposed to the first electrode.

13. The light-emitting element display device according to claim 12, wherein

the first electrode is coupled to one of a source and drain of one of the thin film transistors.

14. The light-emitting element display device according to claim 12, wherein

the second electrode is coupled to a gate of one of the thin film transistors.

15. The light-emitting element display device according to claim 13, wherein

the thin film transistors each have a semiconductor layer, and

the second electrode lies at a same level as the semiconductor layer.

16. The light-emitting element display device according to claim 12, wherein

the first electrode is electrically coupled to the cathode electrode.

17. The light-emitting element display device according to claim 12, wherein

the second electrode is electrically coupled to the anode electrode.

18. A light-emitting element display device comprising:

a substrate made of an insulating material;

a plurality of pixels in a display area on the substrate;

one or a plurality of thin film transistors in each of the plurality of pixels, the thin film transistors each having a first semiconductor layer;

a light-emitting element provided with an organic layer including a light-emitting layer, an anode electrode, and a cathode electrode;

a second semiconductor layer lying at a same level as the first semiconductor layer;

a first electrode between the substrate and the thin film transistors; and

a second electrode provided on a side of the first electrode opposite to the substrate via an insulating film, and being opposed to the first electrode,

wherein the first electrode overlaps with the second semiconductor layer and the first semiconductor layer of at least one of the thin film transistors in a plan view.

19. The light-emitting element display device according to claim 18, wherein

the second electrode is the second semiconductor layer.

20. The light-emitting element display device according to claim 18, wherein

the first electrode is electrically coupled to the second semiconductor layer, and

the second electrode lies between the first electrode and the second semiconductor layer.

21. The light-emitting element display device according to claim 18, wherein

each of the pixels has a light-emitting area, and

the second semiconductor layer overlaps with the light-emitting area in a plan view.