LIGHT-EMITTING DEVICE WTIH OXIDE THIN FILM TRANSISTORS AND MANUFACTURING METHOD THEREOF
First Claim
1. A light-emitting device with thin film transistors, comprising:
- a substrate and a substrate insulating layer formed on the substrate;
a gate electrode, a source electrode, and a drain electrode, wherein the gate electrode is arranged on the substrate insulating layer, and a gate insulating layer is formed between the gate electrode and the electrodes of the source and the drain;
an oxide semiconductor layer, comprising a resource region and a drain region in electric contact with the source electrode and the drain electrode respectively, and a channel region configured to provide a conductive channel between the source electrode and the drain electrode;
a passivation layer arranged on a part of the gate insulating layer, the source electrode, the drain electrode, and the oxide semiconductor layer;
a shielding layer arranged on the passivation layer for shielding the external light from illuminating on the oxide semiconductor layer; and
an organic illuminant comprising a first electrode and a second electrode, with a part of the first electrode penetrating through the passivation layer to be electrically connected with the source electrode or the drain electrode.
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Accused Products
Abstract
The present disclosure disclosed a light-emitting device with thin film transistors, comprising: a substrate and a substrate insulating layer formed thereon; a gate electrode, a source electrode, and a drain electrode. The gate electrode is arranged on the substrate insulating layer, and a gate insulating layer is formed between the gate electrode and the electrodes of the source and the drain. An oxide semiconductor layer comprises a resource region and a drain region being in electric contact with the source electrode and the drain electrode respectively and a channel region for providing a conductive channel therebetween. A passivation layer is arranged on a part of the gate insulating layer, the source electrode, the drain electrode, and the oxide semiconductor layer. A shielding layer is arranged on the passivation layer for shielding the external light from illuminating on the oxide semiconductor layer. The present device can increase the conductive performance and stability of the component.
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Citations
20 Claims
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1. A light-emitting device with thin film transistors, comprising:
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a substrate and a substrate insulating layer formed on the substrate; a gate electrode, a source electrode, and a drain electrode, wherein the gate electrode is arranged on the substrate insulating layer, and a gate insulating layer is formed between the gate electrode and the electrodes of the source and the drain; an oxide semiconductor layer, comprising a resource region and a drain region in electric contact with the source electrode and the drain electrode respectively, and a channel region configured to provide a conductive channel between the source electrode and the drain electrode; a passivation layer arranged on a part of the gate insulating layer, the source electrode, the drain electrode, and the oxide semiconductor layer; a shielding layer arranged on the passivation layer for shielding the external light from illuminating on the oxide semiconductor layer; and an organic illuminant comprising a first electrode and a second electrode, with a part of the first electrode penetrating through the passivation layer to be electrically connected with the source electrode or the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a light-emitting device with an oxide thin film transistor, comprising steps of:
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forming a substrate insulating layer on a substrate; forming a gate electrode on the substrate insulating layer; forming a gate insulating layer on the gate electrode and a part of the substrate insulating layer; forming a source electrode and a drain electrode on the gate insulating layer, and then forming an oxide semiconductor layer on the gate insulating layer, wherein the oxide semiconductor layer comprises a source region and a drain region in contact with the source electrode and the drain electrode respectively and a channel region, so that the channel region is located between the source electrode and the drain electrode to form a conductive channel therebetween; forming a passivation layer on a part of the gate insulating layer, the source electrode, the drain electrode, and the oxide semiconductor layer; forming, on the passivation layer, a first electrode of an organic illuminant, a part of which penetrates through the passivation layer to contact with the source electrode or the drain electrode; and forming a shielding layer to cover the whole oxide semiconductor layer at the time of forming the first electrode. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method for manufacturing a light-emitting device with an oxide thin film transistor, comprising steps of:
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forming a substrate insulating layer on a substrate; forming a gate electrode on the substrate insulating layer; forming a gate insulating layer on the gate electrode and a part of the substrate insulating layer; forming, on the gate insulating layer, an oxide semiconductor layer comprising a source region, a drain region, and a channel region; then, forming, on the gate insulating layer, a source electrode and a drain electrode being in contact with the source region and the drain region respectively; forming a passivation layer on a part of the gate insulating layer, the source electrode, the drain electrode, and the oxide semiconductor layer; forming, on the passivation layer, a first electrode of an organic illuminant, a part of which penetrates through the passivation layer to contact with the source electrode or the drain electrode; and forming a shielding layer to cover the whole oxide semiconductor layer at the time of forming the first electrode. - View Dependent Claims (17, 18, 19, 20)
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Specification