LIGHT-EMITTING DEVICE WTIH OXIDE THIN FILM TRANSISTORS AND MANUFACTURING METHOD THEREOF

• US 20150206930A1
• Filed: 01/17/2014
• Published: 07/23/2015
• Est. Priority Date: 12/31/2013
• Status: Abandoned Application

• Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd. (TCL Technology Group Corp.)
• Original Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd. (TCL Technology Group Corp.)
• Inventors: Liu, Sai-Chang
• Application Number:
  US14/240,371
• Publication Number:
  US 20150206930A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/126 Shielding, e.g. light-blocking means over the TFTs

Abstract

The present disclosure disclosed a light-emitting device with thin film transistors, comprising: a substrate and a substrate insulating layer formed thereon; a gate electrode, a source electrode, and a drain electrode. The gate electrode is arranged on the substrate insulating layer, and a gate insulating layer is formed between the gate electrode and the electrodes of the source and the drain. An oxide semiconductor layer comprises a resource region and a drain region being in electric contact with the source electrode and the drain electrode respectively and a channel region for providing a conductive channel therebetween. A passivation layer is arranged on a part of the gate insulating layer, the source electrode, the drain electrode, and the oxide semiconductor layer. A shielding layer is arranged on the passivation layer for shielding the external light from illuminating on the oxide semiconductor layer. The present device can increase the conductive performance and stability of the component.

Claims

1. A light-emitting device with thin film transistors, comprising:

a substrate and a substrate insulating layer formed on the substrate;

a gate electrode, a source electrode, and a drain electrode, wherein the gate electrode is arranged on the substrate insulating layer, and a gate insulating layer is formed between the gate electrode and the electrodes of the source and the drain;

an oxide semiconductor layer, comprising a resource region and a drain region in electric contact with the source electrode and the drain electrode respectively, and a channel region configured to provide a conductive channel between the source electrode and the drain electrode;

a passivation layer arranged on a part of the gate insulating layer, the source electrode, the drain electrode, and the oxide semiconductor layer;

a shielding layer arranged on the passivation layer for shielding the external light from illuminating on the oxide semiconductor layer; and

an organic illuminant comprising a first electrode and a second electrode, with a part of the first electrode penetrating through the passivation layer to be electrically connected with the source electrode or the drain electrode.

2. The light-emitting device as recited in claim 1, wherein the shielding layer and the first electrode are formed on the passivation layer simultaneously, and the shielding layer is a part of the first electrode extending on the upper surface of the passivation layer.

3. The light-emitting device as recited in claim 1, wherein the shielding layer and the first electrode are formed on the passivation layer simultaneously and the shielding layer is spaced from the first electrode are spaced in a distance.

4. The light-emitting device as recited in claim 1, wherein a pixel defined layer is formed on a part of the passivation layer as well as the first electrode and the shielding layer, with an opening placed thereon to expose a part or the whole of the upper surface of the first electrode.

5. The light-emitting device as recited in claim 4, wherein the organic light-emitting material layer of the organic illuminant and a second electrode are arranged in the opening.

6. The light-emitting device as recited in claim 4, wherein the oxide semiconductor layer is arranged on a part of the gate insulating layer as well as the source electrode and the drain electrode.

7. The light-emitting device as recited in claim 4, wherein the source electrode and the drain electrode are arranged on the oxide semiconductor layer.

8. The light-emitting device as recited in claim 2, wherein a pixel defined layer is formed on a part of the passivation layer as well as the first electrode and the shielding layer, with an opening placed thereon to expose a part or the whole of the upper surface of the first electrode.

9. The light-emitting device as recited in claim 3, wherein a pixel defined layer is formed on a part of the passivation layer as well as the first electrode and the shielding layer, with an opening placed thereon to expose a part or the whole of the upper surface of the first electrode.

10. A method for manufacturing a light-emitting device with an oxide thin film transistor, comprising steps of:

forming a substrate insulating layer on a substrate;

forming a gate electrode on the substrate insulating layer;

forming a gate insulating layer on the gate electrode and a part of the substrate insulating layer;

forming a source electrode and a drain electrode on the gate insulating layer, and then forming an oxide semiconductor layer on the gate insulating layer, wherein the oxide semiconductor layer comprises a source region and a drain region in contact with the source electrode and the drain electrode respectively and a channel region, so that the channel region is located between the source electrode and the drain electrode to form a conductive channel therebetween;

forming a passivation layer on a part of the gate insulating layer, the source electrode, the drain electrode, and the oxide semiconductor layer;

forming, on the passivation layer, a first electrode of an organic illuminant, a part of which penetrates through the passivation layer to contact with the source electrode or the drain electrode; and

forming a shielding layer to cover the whole oxide semiconductor layer at the time of forming the first electrode.

11. The method as recited claim 10, wherein the first electrode is extended along the upper surface of the passivation layer to form the shielding layer.

12. The method as recited claim 10, wherein the first electrode is spaced from the shielding layer in a certain distance.

13. The method as recited in claim 10, wherein a pixel defined layer is formed on a part of the passivation layer as well as the first electrode and the shielding layer, with an opening formed thereon to expose a part or the whole of upper surface of the first electrode.

14. The method as recited in claim 11, wherein a pixel defined layer is formed on a part of the passivation layer as well as the first electrode and the shielding layer, with an opening formed thereon to expose a part or the whole of upper surface of the first electrode.

15. The method as recited in claim 12, wherein a pixel defined layer is formed on a part of the passivation layer as well as the first electrode and the shielding layer, with an opening being formed thereon to expose a part or the whole of upper surface of the first electrode.

16. A method for manufacturing a light-emitting device with an oxide thin film transistor, comprising steps of:

forming a substrate insulating layer on a substrate;

forming a gate electrode on the substrate insulating layer;

forming a gate insulating layer on the gate electrode and a part of the substrate insulating layer;

forming, on the gate insulating layer, an oxide semiconductor layer comprising a source region, a drain region, and a channel region;

then, forming, on the gate insulating layer, a source electrode and a drain electrode being in contact with the source region and the drain region respectively;

forming a passivation layer on a part of the gate insulating layer, the source electrode, the drain electrode, and the oxide semiconductor layer;

forming, on the passivation layer, a first electrode of an organic illuminant, a part of which penetrates through the passivation layer to contact with the source electrode or the drain electrode; and

forming a shielding layer to cover the whole oxide semiconductor layer at the time of forming the first electrode.

17. The method as recited in claim 16, wherein the first electrode is extended along the upper surface of the passivation layer to form the shielding layer.

18. The method as recited in claim 16, wherein the first electrode is spaced from the shielding layer in a certain distance.

19. The method as recited in claim 16, wherein a pixel defined layer is formed on a part of the passivation layer as well as the first electrode and the shielding layer, with an opening formed thereon to expose a part or the whole of the upper surface of the first electrode.

20. The method as recited in claim 17, wherein a pixel defined layer is formed on a part of the passivation layer as well as the first electrode and the shielding layer, with an opening being formed thereon to expose a part or the whole of the upper surface of the first electrode.