SEMICONDUCTOR LIGHT-EMITTING DEVICE

• US 20150207038A1
• Filed: 09/30/2014
• Published: 07/23/2015
• Est. Priority Date: 01/20/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: HWANG, Kyung-Wook, YOO, Geon-Wook, LEE, Dong-hoon, SEO, Ju-Bin, YEON, Ji-Hye
• Granted Patent: US 9,159,882 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: F21K 9/232 specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.

Claims

1. A semiconductor light-emitting device comprising:

a first conductive type semiconductor layer having a main surface;

a plurality of vertical type light-emitting structures protruding beyond the main surface of the first conductive type semiconductor layer;

a transparent electrode layer covering at least a portion of each of the plurality of vertical type light-emitting structures; and

an insulation-filling layer on the transparent electrode layer, the insulation-filling layer extending parallel to the main surface of the first conductive type semiconductor layer to cover an upper portion of each of the plurality of vertical type light-emitting structures, wherein

a selected one of the first conductive type semiconductor layer and the insulation-filling layer has an uneven outer surface opposite to an inner surface of the selected one, the inner surface facing the plurality of vertical type light-emitting structures, and

at least a portion of the insulation-filling layer directly contacts the transparent electrode layer.

2. The semiconductor light-emitting device of claim 1, wherein the selected one is on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, and the other one of the first conductive type semiconductor layer and the insulation-filling layer, which is on the opposite side of the light transmission path, centered on the plurality of vertical type light-emitting structures, has a flat surface that is an opposite surface of a surface of the other one facing the plurality of vertical type light-emitting structures.

3. The semiconductor light-emitting device of claim 2, further comprising;

a substrate covering a surface of the first conductive type semiconductor layer which is opposite to the main surface of the first conductive type semiconductor layer,

wherein the substrate has a flat surface facing the first conductive type semiconductor layer.

4. The semiconductor light-emitting device of claim 1, further comprising;

a substrate covering a surface of the first conductive type semiconductor layer which is opposite to the main surface of the first conductive type semiconductor layer,

wherein the substrate has an uneven surface facing the first conductive type semiconductor layer.

5. The semiconductor light-emitting device of claim 1, wherein the insulation-filling layer comprises:

a first portion filling spaces between the plurality of vertical type light-emitting structures; and

a second portion integrally connected to the first portion, wherein the second portion is formed on the first portion and extends parallel to the main surface of the first conductive type semiconductor layer so as to cover an upper portion of each of the plurality of vertical type light-emitting structures.

6. The semiconductor light-emitting device of claim 1, wherein the insulation-filling layer comprises:

a first insulating layer covering only a portion of each of the plurality of vertical type light-emitting structures between the plurality of vertical type light-emitting structures; and

a second insulating layer on the first insulating layer, the second insulating layer extending parallel to the main surface of the first conductive type semiconductor layer so as to cover a top portion of each of the plurality of vertical type light-emitting structures.

7. The semiconductor light-emitting device of claim 6, wherein the first insulating layer and the second insulating layer each comprise:

a light-transmissive insulating layer, and the transparent electrode layer is between the first insulating layer and the second insulating layer.

8. The semiconductor light-emitting device of claim 6, further comprising:

a reflective electrode layer having a flat surface facing the plurality of vertical type light-emitting structures, wherein

the first insulating layer includes a light-transmissive insulating layer, and

the second insulating layer includes an insulating reflective layer that is between the light-transmissive insulating layer and the reflective electrode layer.

9. The semiconductor light-emitting device of claim 1, further comprising:

a reflective electrode layer having a flat surface facing the plurality of vertical type light-emitting structures, wherein

the insulation-filling layer includes,

a light-transmissive insulating layer covering only a portion of each of the plurality of vertical type light-emitting structures between the plurality of vertical type light-emitting structures; and

an insulating reflective layer extending parallel to the main surface of the first conductive type semiconductor layer so as to cover a top portion of each of the plurality of vertical type light-emitting structures between the light-transmissive insulating layer and the reflective electrode layer.

10. The semiconductor light-emitting device of claim 9, wherein the transparent electrode layer extends between the plurality of vertical type light-emitting structures and the light-transmissive insulating layer and between the plurality of vertical type light-emitting structures and the insulating reflective layer.

11. The semiconductor light-emitting device of claim 9, wherein the insulating reflective layer has a multi-layer structure in which at least two materials having different refractive indices are alternately stacked at least two times.

12. The semiconductor light-emitting device of claim 1, further comprising;

a light-transmissive insulating layer filling spaces between the plurality of vertical type light-emitting structures,

wherein the transparent electrode layer is between the light-transmissive insulating layer and the insulation-filling layer.

13. The semiconductor light-emitting device of claim 1, further comprising;

a metal electrode layer on the insulation-filling layer and extending parallel to the main surface of the first conductive type semiconductor layer to cover the plurality of vertical type light-emitting structures, and has a flat surface facing the plurality of vertically type light-emitting structures.

14. The semiconductor light-emitting device of claim 13, further comprising:

an insulating reflective layer extending parallel to the main surface of the first conductive type semiconductor layer between the insulation-filling layer and the metal electrode layer, wherein

the insulating reflective layer is configured to reflect light generated from the plurality of vertical type light-emitting structures in a direction that becomes more distant from the metal electrode layer before the light reaches the metal electrode layer in a path of light radiated toward the metal electrode layer.

15. A semiconductor light-emitting device comprising:

a first conductive type semiconductor layer having a main surface and a backside surface opposite to the main surface, the backside surface having an uneven portion;

a plurality of vertical type light-emitting structures protruding upward from the main surface of the first conductive type semiconductor layer;

a transparent electrode layer covering at least a portion of each of the plurality of vertical type light-emitting structures;

an insulation-filling layer on the first conductive type semiconductor layer, the insulation-filling layer covering at least a portion of each of the plurality of vertical type light-emitting structures;

a metal electrode layer on the insulation-filling layer, the metal electrode layer extending parallel to the main surface of the first conductive type semiconductor layer to cover the plurality of vertical type light-emitting structures and having a flat surface facing the plurality of vertical type light-emitting structures; and

an insulating reflective layer extending parallel to the main surface of the first conductive type semiconductor layer between the insulation-filling layer and the metal electrode layer.

16. The semiconductor light-emitting device of claim 15, wherein the insulation-filling layer comprises:

a first portion filling spaces between the plurality of vertical type light-emitting structures; and

a second portion integrally connected to the first portion, wherein the second portion is formed on the first portion and extends parallel to the main surface of the first conductive type semiconductor layer so as to cover an upper portion of each of the plurality of vertical type light-emitting structures.

17. The semiconductor light-emitting device of claim 15, wherein

the insulation-filling layer comprises a first light-transmissive insulating layer covering a portion of each of the plurality of vertical type light-emitting structures between the plurality of vertical type light-emitting structures, and

the first light-transmissive insulating layer is between the transparent electrode layer and the insulating reflective layer.

18. The semiconductor light-emitting device of claim 15, wherein

the insulation-filling layer comprises a first light-transmissive insulating layer covering a portion of each of the plurality of vertical type light-emitting structures between the plurality of vertical type light-emitting structures, and

the transparent electrode layer is between the first light-transmissive insulating layer and the insulating reflective layer.

19. The semiconductor light-emitting device of claim 18, further comprising a second light-transmissive insulating layer between the transparent electrode layer and the insulating reflective layer.

20. A semiconductor light-emitting device comprising:

a first conductive, type semiconductor layer;

a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer;

a transparent electrode layer covering at least a portion of each of the plurality of vertical type light-emitting structures;

an insulation-filling layer on the transparent electrode, the insulation-filling layer extending parallel to the first conductive type semiconductor layer so as to cover a top portion of each of the plurality of vertical type light-emitting structures;

a first electrode connected to the transparent electrode via the insulation-filling layer, the first electrode extending in a finger-type on the transparent electrode layer to cover a portion of each of the plurality of vertical type light-emitting structures; and

a second electrode connected to the first conductive type semiconductor layer,

wherein the first conductive type semiconductor layer has a first inner surface and a flat outer surface opposite to the first inner surface, the first inner surface facing the plurality of vertical type light-emitting structures, and

wherein the insulation-filling layer has a second inner surface and an uneven outer surface opposite to the second inner surface, the second inner surface facing the plurality of vertical type light-emitting structures, has an uneven portion.