SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
1. A semiconductor light emitting device, comprising:
- a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer;
a first contact electrode disposed in the first region of the first conductivity-type semiconductor layer;
a second contact electrode disposed on the second conductivity-type semiconductor layer;
a current spreading layer disposed on the second contact electrode and in which a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity are alternately stacked;
a first electrode pad electrically connected to the first contact electrode; and
a second electrode pad disposed on a portion of the current spreading layer and electrically connected to the second contact electrode.
1 Assignment
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Accused Products
Abstract
A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.
25 Citations
26 Claims
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1. A semiconductor light emitting device, comprising:
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a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed in the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a current spreading layer disposed on the second contact electrode and in which a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity are alternately stacked; a first electrode pad electrically connected to the first contact electrode; and a second electrode pad disposed on a portion of the current spreading layer and electrically connected to the second contact electrode. - View Dependent Claims (2, 3, 4, 6, 7, 8, 12, 13, 14, 15, 16, 24, 25)
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5. (canceled)
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9. The semiconductor light emitting device of claim wherein the second opening includes a plurality of second openings, and
the finger electrode extends to between the plurality of second openings.
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17. A semiconductor light emitting device, comprising:
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a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed in the first region of the first conductivity-type semiconductor layer and including a plurality of finger electrodes; a second contact electrode disposed on a top surface of the second conductivity-type semiconductor layer; a current spreading layer disposed on the second contact electrode and in which a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity are alternately stacked; an insulating layer disposed on the stacked semiconductor structure and including a first opening exposing a portion of the first contact electrode and a second opening exposing a portion of the current spreading layer; a first electrode pad disposed on a portion of the insulating layer and electrically connected to the first contact electrode through the first opening; and a second electrode pad disposed on another portion of the insulating layer and electrically connected to the current spreading layer. - View Dependent Claims (18, 19)
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20-23. -23. (canceled)
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26-38. -38. (canceled)
Specification