CORNER SPOILER FOR IMPROVING PROFILE UNIFORMITY

• US 20150211120A1
• Filed: 01/30/2015
• Published: 07/30/2015
• Est. Priority Date: 01/30/2014
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: ZHAO, Lai, FURUTA, Gaku, WANG, Qunhua, TINER, Robin L., PARK, Beom Soo, CHOI, Soo Young, YADAV, Sanjay D.
• Granted Patent: US 10,697,063 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/45591 Fixed means, e.g. wings, baffles
• CPC Class Codes: C23C 16/4585 Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32651 Shields, e.g. dark space shields, Faraday shields

Abstract

The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.

Claims

1. A corner spoiler for a processing chamber, comprising:

an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is positioned to change plasma distribution at a corner of a substrate in the processing chamber, and wherein the L-shaped body comprises;

a first leg; and

a second leg, wherein the first and second legs meet at an inside corner and an outside corner of the L-shaped body, and wherein the distance from the end of the first leg to the outside corner is twice the distance from the end of the first leg to the inside corner, and the distance from the end of the second leg to the outside corner is about twice the distance from the end of the second leg to the inside corner.

2. The corner spoiler of claim 1, wherein the dielectric material is aluminum oxide.

3. The corner spoiler of claim 1, wherein the dielectric material is polytetrafluoroethylene.

4. The corner spoiler of claim 1, wherein the corner spoiler has a uniform thickness between about 3 mm and about 9 mm.

5. The corner spoiler of claim 1, wherein the distance from the end of the first leg to the outside corner is between about 70 mm and about 110 mm.

6. A shadow frame for a processing chamber, comprising:

a rectangular shaped body having a rectangular opening therethrough; and

one or more corner spoilers coupled to the rectangular shaped body at one or more corners of the rectangular shaped body, wherein the one or more corner spoilers comprises;

an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is positioned to change plasma distribution at a corner of a substrate in the processing chamber.

7. The shadow frame of claim 6, wherein the L-shaped body comprises:

a first leg; and

a second leg, wherein the first and second legs meet at an inside corner and an outside corner of the L-shaped body, and wherein the distance from the end of the first leg to the outside corner is twice the distance from the end of the first leg to the inside corner, and the distance from the end of the second leg to the outside corner is twice the distance from the end of the second leg to the inside corner.

8. The shadow frame of claim 6, wherein the dielectric material is aluminum oxide.

9. The shadow frame of claim 6, wherein the dielectric material is polytetrafluoroethylene.

10. The shadow frame of claim 6, wherein the one or more corner spoilers has a uniform thickness between about 3 mm and about 9 mm.

11. The shadow frame of claim 6, wherein the distance between the rectangular shaped body and the one or more corner spoilers is between about 0 mm and about 12 mm.

12. The shadow frame of claim 6, wherein the distance between an inside of the first and second legs and an inside edge of the shadow frame is between about 2 mm and about 15 mm.

13. A processing chamber, comprising:

a corner spoiler, comprising;

an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is positioned to change plasma distribution at a corner of a substrate in the processing chamber, and wherein the L-shaped body comprises;

a first leg; and

a second leg, wherein the first and second legs meet at an inside corner and an outside corner of the L-shaped body, and wherein the distance from the end of the first leg to the outside corner is twice the distance from the end of the first leg to the inside corner, and the distance from the end of the second leg to the outside corner is about twice the distance from the end of the second leg to the inside corner.

14. The processing chamber of claim 13, wherein the dielectric material is aluminum oxide or polytetrafluoroethylene.

15. The processing chamber of claim 13, wherein the one or more corner spoilers has a uniform thickness between about 3 mm and about 9 mm.

16. The processing chamber of claim 13, further comprising:

a shadow frame, comprising;

a rectangular shaped body having a rectangular opening therethrough, wherein one or more corner spoilers is coupled to the rectangular shaped body at one or more corners of the rectangular shaped body

17. The processing chamber of claim 16, wherein the shadow frame comprises aluminum oxide or polytetrafluoroethylene.

18. The processing chamber of claim 13, further comprising:

a diffuser disposed opposite the substrate.

19. The processing chamber of claim 18, wherein the diffuser comprises a center region having a first thickness and a peripheral region having a second thickness, wherein the first thickness is less than the second thickness.

20. The processing chamber of claim 18, wherein the distance between the diffuser and the substrate is between about 400 mm and about 1200 mm.