MODELING PATTERN DEPENDENT EFFECTS FOR A 3-D VIRTUAL SEMICONDUCTOR FABRICATION ENVIRONMENT
First Claim
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1. A non-transitory computer-readable medium holding computer-executable instructions for identifying and modeling pattern dependent effects in a 3-D virtual semiconductor device fabrication environment, the instructions when executed causing the computing device to:
- generate a 2-D local mask from a 3-D model of a semiconductor device structure;
combine a global mask corresponding to 2D design layout data with the local mask to create a combined mask;
convolve at least one proximity function with the combined mask to create at least one convolved mask;
create a loading map using the at least one convolved mask, the loading map indicative of process behavior for a pattern dependent modeling step for virtual semiconductor device fabrication that varies as a result of one or more of pattern density, feature size or aspect ratio dependence; and
execute an algorithm to model the pattern dependent modeling step, the behavior of the algorithm altered based on the loading map.
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Abstract
A mechanism for identifying and modeling pattern dependent effects of processes in a 3-D Virtual Semiconductor Fabrication Environment is discussed.
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Citations
28 Claims
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1. A non-transitory computer-readable medium holding computer-executable instructions for identifying and modeling pattern dependent effects in a 3-D virtual semiconductor device fabrication environment, the instructions when executed causing the computing device to:
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generate a 2-D local mask from a 3-D model of a semiconductor device structure; combine a global mask corresponding to 2D design layout data with the local mask to create a combined mask; convolve at least one proximity function with the combined mask to create at least one convolved mask; create a loading map using the at least one convolved mask, the loading map indicative of process behavior for a pattern dependent modeling step for virtual semiconductor device fabrication that varies as a result of one or more of pattern density, feature size or aspect ratio dependence; and execute an algorithm to model the pattern dependent modeling step, the behavior of the algorithm altered based on the loading map. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A non-transitory computer-readable medium holding computer-executable instructions for identifying and modeling pattern dependent effects in a 3-D virtual semiconductor device fabrication environment, the instructions when executed causing the computing device to:
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receive 2D design layout data and a fabrication process sequence for a semiconductor device structure, the fabrication process sequence including a pattern dependent process step, the pattern dependent process step including a pattern dependence relation; build, during a virtual fabrication run to virtually fabricate the semiconductor device structure, a 3-D model of a semiconductor device structure by executing the process sequence up until the pattern dependent process step; generate a 2-D local mask from a 3-D model of a semiconductor device structure built by executing the process sequence up until the pattern dependent process step; convolve at least one proximity function with the local mask to create at least one convolved local mask; convolve at least one proximity function with a global mask based on 2D design layout data to create at least one convolved global mask; create a loading map using the convolved local and global masks, the loading map indicative of process behavior for a pattern dependent modeling step for virtual semiconductor device fabrication that varies as a result of one or more of pattern density, feature size or aspect ratio dependence; execute an algorithm to model the pattern dependent modeling step, the behavior of the algorithm altered based on the loading map; and execute a remainder of the process sequence following the pattern dependent modeling step to complete the build of the 3-D model of the semiconductor device structure. - View Dependent Claims (12)
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13. A computer-implemented method for identifying and modeling pattern dependent effects in a 3-D virtual semiconductor device fabrication environment, comprising:
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generating a 2-D local mask from a 3-D model of a semiconductor device structure; combining a global mask corresponding to 2D design layout data with the local mask to create a combined mask; convolving at least one proximity function with the combined mask to create at least one convolved mask; creating a loading map using the at least one convolved mask, the loading map indicative of process behavior for a pattern dependent modeling step for virtual semiconductor device fabrication that varies as a result of one or more of pattern density, feature size or aspect ratio dependence; and executing an algorithm to model the pattern dependent modeling step, the behavior of the algorithm altered based on the loading map. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A computer-implemented method for identifying and modeling pattern dependent effects in a 3-D virtual semiconductor device fabrication environment, comprising:
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receiving 2D design layout data and a fabrication process sequence for a semiconductor device structure, the fabrication process sequence including a pattern dependent process step, the pattern dependent process step including a pattern dependence relation; building, during a virtual fabrication run to virtually fabricate the semiconductor device structure, a 3-D model of a semiconductor device structure by executing the process sequence up until the pattern dependent process step; generating a 2-D local mask from a 3-D model of a semiconductor device structure built by executing the process sequence up until the pattern dependent process step; convolving at least one proximity function with the local mask to create at least one convolved local mask; convolving one or more proximity functions with a global mask based on 2D design layout data to create at least one convolved global mask; creating a loading map using the convolved local and global masks, the loading map indicative of process behavior for a pattern dependent modeling step for virtual semiconductor device fabrication that varies as a result of one or more of pattern density, feature size or aspect ratio dependence; executing an algorithm to model the pattern dependent modeling step, the behavior of the algorithm altered based on the loading map; and executing a remainder of the process sequence following the pattern dependent modeling step to complete the build of the 3-D model of the semiconductor device structure. - View Dependent Claims (24)
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25. A computer-implemented method for identifying and modeling pattern dependent effects in a 3-D virtual semiconductor device fabrication environment, comprising:
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receiving 2D design layout data and a fabrication process sequence for a semiconductor device structure, the fabrication process sequence including a pattern dependent process step, the pattern dependent process step including a pattern dependence relation; building, during a virtual fabrication run to virtually fabricate the semiconductor device structure, a 3-D model of a semiconductor device structure by executing the process sequence up until the pattern dependent process step; generating a 2-D local mask from the 3-D model of a semiconductor device structure built by executing the process sequence up until the pattern dependent process step; combining a global mask corresponding to the 2D design layout data with the local mask to create a combined mask; convolving at least one proximity function with the combined mask to create at least one convolved mask; creating a loading map using the at least one convolved mask, the loading map indicative of process behavior for a pattern dependent modeling step for virtual semiconductor device fabrication that varies as a result of one or more of pattern density, feature size or aspect ratio dependence; executing an algorithm to model the pattern dependent modeling step, the behavior of the algorithm altered based on the loading map; and executing a remainder of the process sequence following the pattern dependent modeling step to complete the build of the 3-D model of the semiconductor device structure. - View Dependent Claims (26)
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27. A non-transitory computer-readable medium holding computer-executable instructions for identifying and modeling pattern dependent effects in a 3-D virtual semiconductor device fabrication environment, the instructions when executed causing the computing device to:
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receive 2D design layout data and a fabrication process sequence for a semiconductor device structure, the fabrication process sequence including a pattern dependent process step, the pattern dependent process step including a pattern dependence relation; build, during a virtual fabrication run to virtually fabricate the semiconductor device structure, a 3-D model of a semiconductor device structure by executing the process sequence up until the pattern dependent process step; generate a 2-D local mask from the 3-D model of a semiconductor device structure built by executing the process sequence up until the pattern dependent process step; combine a global mask corresponding to the 2D design layout data with the local mask to create a combined mask; convolve at least one proximity function with the combined mask at least one convolved mask; create a loading map using the at least one convolved mask, the loading map indicative of process behavior for a pattern dependent modeling step for virtual semiconductor device fabrication that varies as a result of one or more of pattern density, feature size or aspect ratio dependence; execute an algorithm to model the pattern dependent modeling step, the behavior of the algorithm altered based on the loading map; and execute a remainder of the process sequence following the pattern dependent modeling step to complete the build of the 3-D model of the semiconductor device structure. - View Dependent Claims (28)
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Specification