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METHOD FOR PROVIDING UNIFORM DISTRIBUTION OF PLASMA DENSITY IN A PLASMA TREATMENT APPARATUS

  • US 20150214013A1
  • Filed: 01/25/2014
  • Published: 07/30/2015
  • Est. Priority Date: 01/25/2014
  • Status: Active Grant
First Claim
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1. A method for providing uniform distribution of plasma density in a CCP plasma processing apparatus, the method comprising the steps of:

  • providing a showerhead-cooler system of a semiconductor-processing chamber of the CCP plasma processing apparatus intended for plasma processing of objects, the system comprising a showerhead having a plurality of through gas holes and a gas-feeding cooler plate that is connected to an RF power supply, has an electric contact with the showerhead and forms with the showerhead a gas accumulation reservoir, one ends of the gas holes being connected to the gas accumulation reservoir, and the other ends of the gas holes being connected to semiconductor-processing chamber, the gas-feeding cooler plate being connected to a source of a working gas and has a plurality of through gas feeding passages that communicate with the gas accumulating reservoir, the shower head having a central area and a peripheral portion;

    forming on said one ends of at least some of the through gas holes conical nozzles with a cone angle θ

    that decreases in the direction from the peripheral portion to the central area of the showerhead in the range from;

    120°

    to 0°

    ; and

    coating the surfaces of the conical nozzles and at least a part of the walls of the gas holes in the area adjacent to the conical nozzles with a protective coating resistant to electrical breakdown and chemical corrosion.

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