TRENCH TRANSISTORS AND METHODS WITH LOW-VOLTAGE-DROP SHUNT TO BODY DIODE
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Abstract
Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. This reduces the voltage drop when the transistor is forward-biased. In an alternative embodiment, the power device with lower threshold voltage is simply connected as a depletion diode, to thereby shunt the body diodes of the active transistors, without affecting turn-on and ON-state behavior.
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Citations
77 Claims
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1-57. -57. (canceled)
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58. A method of manufacturing a semiconductor device, comprising:
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forming at least a first and a second trench gate electrode in a layer of first-conductivity-type semiconductor material; performing one or more implants to thereby form body regions adjoining ones of said trench gate electrodes; forming first-conductivity-type source regions above said body regions; introducing ions into portions of the body regions adjoining said first trench gate electrode, to thereby lower a threshold voltage associated with said body regions; connecting said trench gate electrodes identically to a common gate electrode; and connecting said source regions identically to a common source electrode. - View Dependent Claims (59, 60, 61, 62, 63, 64, 65, 66, 74, 75)
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67. A method of manufacturing a semiconductor device, comprising:
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forming at least a first and a second trench gate electrode in a layer of first-conductivity-type semiconductor material; performing one or more implants of second-conductivity-type dopants to form body regions adjoining ones of said trench gate electrodes; introducing ions into portions of said body regions adjoining said first trench gate electrode, to thereby lower a threshold voltage associated with said body regions; forming first-conductivity-type source regions above said body regions; and shorting said first trench gate electrode, but not said second trench gate electrode, to said source regions. - View Dependent Claims (68, 69, 70, 71, 72, 73, 76, 77)
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Specification