MOS-Gated Power Devices, Methods, and Integrated Circuits
1 Assignment
0 Petitions
Accused Products
Abstract
MOS-gated devices, related methods, and systems for vertical power and RF devices including an insulated trench and a gate electrode. A body region is positioned so that a voltage bias on the gate electrode will cause an inversion layer in the body region. Permanent electrostatic charges are included in said insulation material. A conductive shield layer is positioned above the insulated trench, to reduce parasitic capacitances.
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Citations
47 Claims
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1-33. -33. (canceled)
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34. A substantially vertical device comprising:
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an insulated trench having a sidewall; a gate electrode; a lightly doped diffusion layer adjacent to said sidewall of said insulated trench such that a voltage bias applied to the gate electrode can induce inversion in said lightly doped diffusion layer to thereby create a channel; permanent electrostatic charge positioned near said sidewall; and a conductive shield layer which is positioned above said insulated trench, and not electrically connected to said gate. - View Dependent Claims (35, 36)
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37. A substantially vertical device comprising:
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a source region; a body region separating said source region from a drain region; a gate electrode positioned such that when a voltage bias is applied to said gate electrode, an inversion region is induced in said body region; a vertical insulation trench through said body region; and a lightly-doped diffusion in said body region along the sidewalls of said vertical insulation trench. - View Dependent Claims (38, 39, 40, 41, 42)
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43. A vertical device comprising:
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a source region; a body region separating said source region from a drain region; a gate electrode positioned such that when a voltage bias is applied to said gate electrode, an inversion region is induced in said body region; a vertical insulation trench through said body region; permanent electrostatic charge positioned along an exterior edge within said vertical insulation trench, and a lightly-doped diffusion in said body region along the sidewalls of said vertical insulation trench. - View Dependent Claims (44, 45, 46)
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47-105. -105. (canceled)
Specification