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MULTIWIDTH FINFET WITH CHANNEL CLADDING

  • US 20150214365A1
  • Filed: 01/24/2014
  • Published: 07/30/2015
  • Est. Priority Date: 01/24/2014
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a semiconductor substrate having a plurality of fins formed thereon, wherein at least one fin of the plurality of fins is comprised of a lower portion and an upper portion, wherein the lower portion has a first thickness and wherein the upper portion has a second thickness, and wherein the first thickness is greater than the second thickness, and wherein the at least one fin has a staircase profile.

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