MULTIWIDTH FINFET WITH CHANNEL CLADDING
First Claim
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1. A semiconductor structure comprising:
- a semiconductor substrate having a plurality of fins formed thereon, wherein at least one fin of the plurality of fins is comprised of a lower portion and an upper portion, wherein the lower portion has a first thickness and wherein the upper portion has a second thickness, and wherein the first thickness is greater than the second thickness, and wherein the at least one fin has a staircase profile.
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Abstract
An improved structure and methods of fabrication for finFET devices utilizing a cladding channel are disclosed. A staircase fin is formed where the fin comprises an upper portion of a first width and a lower portion of a second width, wherein the lower portion is wider than the upper portion. The narrower upper portion allows the cladding channel to be deposited and still have sufficient space for proper gate deposition, while the lower portion is wide to provide improved mechanical stability, which protects the fins during the subsequent processing steps.
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Citations
20 Claims
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1. A semiconductor structure comprising:
- a semiconductor substrate having a plurality of fins formed thereon, wherein at least one fin of the plurality of fins is comprised of a lower portion and an upper portion, wherein the lower portion has a first thickness and wherein the upper portion has a second thickness, and wherein the first thickness is greater than the second thickness, and wherein the at least one fin has a staircase profile.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor structure comprising:
- a semiconductor substrate having a plurality of NFET fins formed thereon and a plurality of PFET fins formed thereon, wherein each fin of the plurality of PFET fins is comprised of a lower portion and an upper portion, wherein the lower portion has a first thickness and wherein the upper portion has a second thickness, and wherein the first thickness is greater than the second thickness.
- View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method of forming a semiconductor structure, comprising:
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forming an upper portion of a first set of fins; forming hardmask material regions over the upper portion of the first set of fins; forming a lower portion of the first set of fins; depositing a dielectric layer over the first set of fins; recessing the dielectric layer to expose the upper portion of the first set of fins; and forming a first conformal cladding channel on the upper portion of the first set of fins. - View Dependent Claims (18, 19, 20)
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Specification