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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20150214376A1
  • Filed: 11/21/2014
  • Published: 07/30/2015
  • Est. Priority Date: 12/03/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor comprising a source and a drain; and

    a second transistor comprising a gate, the gate directly connecting to one of the source and the drain,wherein each of the source and the drain includes a first Cu—

    X alloy film,wherein the gate includes a second Cu—

    X alloy film,wherein X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti, andwherein the first Cu—

    X alloy film and the second Cu—

    X alloy film are covered with an oxide film including X.

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