SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a gate electrode;
a gate insulating layer over the gate electrode;
an oxide semiconductor layer over the gate insulating layer;
a first insulating layer over the oxide semiconductor layer;
a second insulating layer over the first insulating layer; and
wherein the second insulating layer comprises one compound selected from the group consisting of silicon nitride, silicon oxynitride, and silicon nitride oxide.
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Accused Products
Abstract
The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer.
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Citations
17 Claims
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1. A semiconductor device comprising:
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a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; a first insulating layer over the oxide semiconductor layer; a second insulating layer over the first insulating layer; and wherein the second insulating layer comprises one compound selected from the group consisting of silicon nitride, silicon oxynitride, and silicon nitride oxide. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a first gate electrode; a gate insulating layer over the first gate electrode; an oxide semiconductor layer over the gate insulating layer; a first insulating layer over the oxide semiconductor layer; a second insulating layer over the first insulating layer; and a second gate electrode over the second insulating layer, wherein the second insulating layer comprises one compound selected from the group consisting of silicon nitride, silicon oxynitride, and silicon nitride oxide, and wherein both the first gate electrode and the second gate electrode extend beyond side edges of the oxide semiconductor layer in a channel width direction of the oxide semiconductor layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification