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LIGHT-EMITTING DEVICE

  • US 20150214426A1
  • Filed: 12/17/2014
  • Published: 07/30/2015
  • Est. Priority Date: 01/29/2014
  • Status: Abandoned Application
First Claim
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1. A light-emitting device comprising:

  • a first type doped semiconductor layer;

    a second type doped semiconductor layer; and

    a light-emitting layer located between the first type doped semiconductor layer and the second type doped semiconductor layer, the light-emitting layer comprising a plurality of barrier layers and a plurality of quantum well layers, each of the quantum well layers being located between two adjacent barrier layers of the barrier layers, and the quantum well layers comprising a germanium dopant.

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