LIGHT-EMITTING DEVICE

• US 20150214426A1
• Filed: 12/17/2014
• Published: 07/30/2015
• Est. Priority Date: 01/29/2014
• Status: Abandoned Application

• Current Assignee: Rigidcrystal Technology Co., Ltd.
• Original Assignee: Rigidcrystal Technology Co., Ltd.
• Inventors: Hung, Wen-Ching
• Application Number:
  US14/572,797
• Publication Number:
  US 20150214426A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/325 characterised by the doping materials

Abstract

A light-emitting device including a first type doped semiconductor layer, a second type doped semiconductor layer, and a light-emitting layer is provided. The light-emitting layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer. The light-emitting layer includes a plurality of barrier layers and a plurality of quantum well layers. Each of the quantum well layers is located between two adjacent barrier layers, and the quantum well layers include a germanium dopant.

Claims

1. A light-emitting device comprising:

a first type doped semiconductor layer;

a second type doped semiconductor layer; and

a light-emitting layer located between the first type doped semiconductor layer and the second type doped semiconductor layer, the light-emitting layer comprising a plurality of barrier layers and a plurality of quantum well layers, each of the quantum well layers being located between two adjacent barrier layers of the barrier layers, and the quantum well layers comprising a germanium dopant.

2. The light-emitting device as recited in claim 1, wherein a material of the quantum well layers comprises indium gallium nitride containing the germanium dopant (Ge:

InGaN).

3. The light-emitting device as recited in claim 2, wherein a material of the barrier layers comprises gallium nitride (GaN).

4. The light-emitting device as recited in claim 2, wherein a material of the barrier layers comprises indium gallium nitride containing the germanium dopant (Ge:

InGaN).

5. The light-emitting device as recited in claim 1, wherein the first type doped semiconductor layer is an n-type doped semiconductor layer, and the second type doped semiconductor layer is a p-type doped semiconductor layer.

6. The light-emitting device as recited in claim 1, wherein the first type doped semiconductor layer is a p-type doped semiconductor layer, and the second type doped semiconductor layer is an n-type doped semiconductor layer.

7. The light-emitting device as recited in claim 1, further comprising:

a substrate, wherein the first type doped semiconductor layer is located over the substrate and between the substrate and the light-emitting layer.

8. The light-emitting device as recited in claim 7, further comprising:

a buffer layer located between the substrate and the first type doped semiconductor layer.

9. The light-emitting device as recited in claim 1, further comprising:

a first electrode; and

a second electrode, wherein the first electrode and the first type doped semiconductor layer are electrically connected to each other, and the second electrode and the second type doped semiconductor layer are electrically connected to each other.

10. The light-emitting device as recited in claim 1, wherein the substrate comprises an aluminum oxide (Al₂O₃) substrate, a silicon (Si) substrate, a silicon carbide (SiC) substrate, a lithium aluminum oxide (LiAlO₂) substrate, a lithium gallium oxide (LiGaO₂) substrate, a gallium oxide (Ga₂O₃) substrate, a GaN substrate, a gallium phosphide (GaP) substrate, or a gallium arsenide (GaAs) substrate.

11. The light-emitting device as recited in claim 1, wherein light emitted from the light-emitting layer has a wavelength ranging from about 365 nm to about 850 nm.