IN-SITU STRAINING EPITAXIAL PROCESS
First Claim
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1. A method comprising:
- providing a semiconductor substrate with a gate stack;
forming a recess in the semiconductor substrate, the recess being adjacent to the gate stack;
performing an epitaxial growth process within the recess to form a straining region; and
forming a defect within the straining region in-situ with the epitaxial growth process.
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Abstract
A method includes forming a recess in a semiconductor substrate, the recess being adjacent to a gate stack, performing an epitaxial growth process within the recess to form a straining region, and forming a defect within the straining region in-situ with the epitaxial growth process.
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Citations
20 Claims
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1. A method comprising:
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providing a semiconductor substrate with a gate stack; forming a recess in the semiconductor substrate, the recess being adjacent to the gate stack; performing an epitaxial growth process within the recess to form a straining region; and forming a defect within the straining region in-situ with the epitaxial growth process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method comprising:
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forming a recess in a semiconductor substrate, the recess being adjacent to a gate stack, the gate stack positioned above a channel; performing an epitaxial growth process within the recess to form a straining region to cause a tensile strain on the channel; and forming a defect within the straining region in-situ with the epitaxial growth process, the defect comprising at least two dislocations that form a cross-point within the straining region; wherein a position of the cross-point is tuned by adjusting parameters of the epitaxial growth process. - View Dependent Claims (16, 17)
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18. A semiconductor device comprising:
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an epitaxial straining region formed within a semiconductor substrate, the straining region being positioned adjacent to a gate stack, the gate stack being positioned above a channel; wherein the straining region comprises a defect comprising two crossing dislocations such that a cross-point of the dislocations is closer to a bottom of the straining region than to a top of the straining region; wherein the straining region comprises an element with a smaller lattice constant than a material forming the substrate. - View Dependent Claims (19, 20)
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Specification