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IN-SITU STRAINING EPITAXIAL PROCESS

  • US 20150221509A1
  • Filed: 02/06/2014
  • Published: 08/06/2015
  • Est. Priority Date: 02/06/2014
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a semiconductor substrate with a gate stack;

    forming a recess in the semiconductor substrate, the recess being adjacent to the gate stack;

    performing an epitaxial growth process within the recess to form a straining region; and

    forming a defect within the straining region in-situ with the epitaxial growth process.

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