SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
First Claim
1. A semiconductor device, comprising:
- a substrate comprising a plurality of first active regions and a plurality of second active regions;
a plurality of first gate structures formed above the first active regions, respectively, and a plurality of second gate structures formed above the second active regions, respectively; and
a plurality of first source/drain layers corresponding to the first gate structures, respectively, and a plurality of second source/drain layers corresponding to the second gate structures, respectively,wherein a width of each of the first source/drain layers is smaller than a width of each of the second source/drain layers.
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Abstract
A semiconductor device includes: a substrate including a plurality of first active regions and a plurality of second active regions; a plurality of first gate structures formed above the first active regions, respectively, and a plurality of second gate structures formed above the second active regions, respectively; and a plurality of first source/drain layers corresponding to the first gate structures, respectively, and a plurality of second source/drain layers corresponding to the second gate structures, respectively, wherein a width of each of the first source/drain layers is smaller than a width of each of the second source/drain layers.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a substrate comprising a plurality of first active regions and a plurality of second active regions; a plurality of first gate structures formed above the first active regions, respectively, and a plurality of second gate structures formed above the second active regions, respectively; and a plurality of first source/drain layers corresponding to the first gate structures, respectively, and a plurality of second source/drain layers corresponding to the second gate structures, respectively, wherein a width of each of the first source/drain layers is smaller than a width of each of the second source/drain layers. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device, comprising:
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a substrate including a field region and first and second active regions, an isolation layer being formed on the field region, and the first and second active regions protruding from the isolation layer; first and second gate structures on the first and second active regions, respectively; first and second spacers on sidewalls of the first and second active regions, respectively, top surfaces of the first and second spacers being formed to be higher than those of the first and second active regions, respectively, and heights of the top surfaces of the first and second spacers being different from each other; and first and second source/drain layers adjacent to the first and second gate structures on the first and second active regions, respectively, the first and second source/drain layers contacting the first and second spacers, respectively. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of manufacturing a semiconductor device, the method comprising:
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forming an isolation layer on a substrate to define a field region and first and second active regions, the field region being covered by the isolation layer, and the first and second active regions not being covered by the isolation layer and protruding from the isolation layer; forming first and second dummy gate structures on the first and second active regions, respectively; forming first and second spacers on both sidewalls of the first and second active regions not covered by the first and second dummy gate structures, respectively, heights of top surfaces of the first and second spacers being different from each other; removing upper portions of the first and second active regions not covered by the first and second dummy gate structures, respectively, to form first and second recesses defined by the first and second spacers, respectively; and forming first and second source/drain layers which fills the first and second recesses and protrudes from the first and second spacers, respectively. - View Dependent Claims (17, 18, 19, 20)
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Specification