PROCESSES AND SOLUTIONS FOR SUBSTRATE CLEANING AND ELECTROLESS DEPOSITION

• US 20150225679A1
• Filed: 04/17/2015
• Published: 08/13/2015
• Est. Priority Date: 03/28/2008
• Status: Abandoned Application

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: KOLICS, Artur, LI, Nanhai
• Application Number:
  US14/690,240
• Publication Number:
  US 20150225679A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 3/0073 Anticorrosion compositions
• CPC Class Codes: C11D 3/04 Water-soluble compounds
• CPC Class Codes: C11D 3/042 Acids
• CPC Class Codes: C11D 3/2086 Hydroxy carboxylic acids-salts thereof
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: H01L 21/02041 Cleaning
• CPC Class Codes: H01L 21/02074 the processing being a planarization of conductive layers
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 21/76883 Post-treatment or after-treatment of the conductive material

Abstract

This invention pertains to fabrication of devices. One embodiment is a method of substrate cleaning and electroless deposition of a cap layer for an integrated circuit. The method is performed on a substrate having a surface comprising a metal and dielectric damascene metallization layer. The method comprises exposing the surface of the substrate to a cleaning solution sufficient to clean the surface of the substrate and exposing the surface of the substrate to an electroless deposition solution sufficient to deposit the cap layer. Other embodiments of the present invention include solutions to clean the substrate and solutions to accomplish electroless deposition.

Claims

1. A cleaning solution for cleaning a substrate for electroless deposition of a cap layer on the substrate, the cleaning solution comprising one or more hydroxycarboxylic acid(s) or one or more non-alkali metal salt(s) of one or more hydroxycarboxylic acid(s).

2. The cleaning solution of claim 1 having a pH >

0.5 and <

2.5 and further comprising;

one or more surfactant(s);

one or more reducing agent(s); and

optionally, one or more pH adjustor(s).

3. The cleaning solution of claim 1 having a pH >

2.5 and <

5 and further comprising;

one or more surfactant(s);

one or more reducing agent(s);

optionally, one or more pH adjustor(s); and

optionally, one or more complexing agent(s) for Cu(I) ions.

4. The cleaning solution of claim 1 having a pH >

5 and <

8 and further comprising;

one or more surfactant(s);

one or more reducing agent(s);

optionally, one or more pH adjustor(s);

optionally, one or more complexing agent(s) for Cu(I) ions;

optionally, one or more corrosion inhibitor(s) substantially free of nitrogen and substantially free of sulfur; and

optionally, one or more oxygen scavenger(s).

5. The cleaning solution of claim 1 having a pH >

8 and <

13 and further comprising;

one or more surfactant(s);

one or more reducing agent(s);

optionally, one or more pH adjustor(s);

optionally, one or more complexing agent(s) for Cu(I) ions;

optionally, one or more corrosion inhibitor(s) substantially free of nitrogen and substantially free of sulfur; and

optionally, one or more oxygen scavenger(s).

6. The cleaning solution of claim 1 having a pH <

2.5 and further comprising;

optionally, one or more surfactant(s);

optionally, one or more reducing agent(s); and

optionally, one or more pH adjustor(s).

7. The cleaning solution of claim 1 having a pH >

0.5 and <

2.5 and further comprising;

one or more surfactant(s);

one or more reducing agent(s);

optionally, one or more pH adjustor(s); and

one or more fluoride compound(s) selected from the group consisting of hydrogen fluoride, tetrafluoroborate, and non-metal salts of hydrofluoric acid.

8. The cleaning solution of claim 1 having a pH >

2.5 and <

5 and further comprising;

one or more surfactant(s);

one or more reducing agent(s);

optionally, one or more pH adjustor(s);

optionally, one or more complexing agent(s) for Cu(I) ions; and

one or more fluoride compound(s) selected from the group consisting of hydrogen fluoride, tetrafluoroborate, and non-metal salts of hydrofluoric acid.

9. The cleaning solution of claim 1 having a pH >

5 and <

8 and further comprising;

one or more surfactant(s);

one or more reducing agent(s);

optionally, one or more pH adjustor(s);

optionally, one or more complexing agent(s) for Cu(I) ions;

optionally, one or more corrosion inhibitor(s) substantially free of nitrogen and substantially free of sulfur;

optionally, one or more oxygen scavenger(s); and

one or more fluoride compound(s) selected from the group consisting of hydrogen fluoride, tetrafluoroborate, and non-metal salts of hydrofluoric acid.

10. The cleaning solution of claim 1 having a pH >

8 and <

13 and further comprising;

one or more surfactant(s);

one or more reducing agent(s);

optionally, one or more pH adjustor(s);

optionally, one or more complexing agent(s) for Cu(I) ions;

optionally, one or more corrosion inhibitor(s) substantially free of nitrogen and substantially free of sulfur;

optionally, one or more oxygen scavenger(s); and

one or more fluoride compound(s) selected from the group consisting of hydrogen fluoride, tetrafluoroborate, and non-metal salts of hydrofluoric acid.

11. The cleaning solution of claim 1 having a pH <

2.5 and further comprising;

optionally, one or more surfactant(s);

optionally, one or more reducing agent(s);

optionally, one or more pH adjustor(s); and

one or more fluoride compound(s) selected from the group consisting of hydrogen fluoride, tetrafluoroborate, and non-metal salts of hydrofluoric acid;

the pH of the cleaning solution is.

12. The cleaning solution of claim 1 having a pH <

2.5 and further comprising;

one or more oxidizer(s);

optionally, one or more surfactant(s); and

optionally, one or more pH adjustor(s).

13. The cleaning solution of claim 1 having a pH >

1 and <

6 and further comprising;

one or more surfactant(s);

optionally, one or more reducing agent(s); and

optionally, one or more pH adjustor(s);

wherein the electroless deposition of the cap layer is accomplished using an electroless deposition solution comprising;

the one or more hydroxycarboxylic acid(s) or the one or more non-alkali metal salt(s) of the one or more hydroxycarboxylic acid(s);

the one or more surfactant(s);

optionally, the one or more reducing agent(s); and

optionally, the one or more pH adjustor(s).

14. The cleaning solution of claim 1 having a pH >

1 and <

6 and further comprising;

optionally, one or more surfactant(s);

optionally, one or more reducing agent(s); and

optionally, one or more pH adjustor(s);

wherein the electroless deposition of the cap layer is accomplished using an electroless deposition solution comprising;

the one or more hydroxycarboxylic acid(s) or the one or more non-alkali metal salt(s) of the one or more hydroxycarboxylic acid(s);

one or more surfactant(s);

optionally, the one or more reducing agent(s); and

optionally, the one or more pH adjustor(s).