Device for Measuring Oxidation-Reduction Potential and Method for Measuring Oxidation-Reduction Potential

• US 20150226701A1
• Filed: 08/09/2013
• Published: 08/13/2015
• Est. Priority Date: 08/10/2012
• Status: Active Grant

• Current Assignee: National University Corporation Toyohashi University Of Technology
• Original Assignee: Nagaoka University of Technology
• Inventors: FUTAGAWA, Masato, SAWADA, Kazuaki, TAKAHASHI, Sou
• Granted Patent: US 9,689,837 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G01N 27/4168 Oxidation-reduction potential, e.g. for chlorination of water water analysis G01N33/18
• CPC Class Codes: H01L 27/0664 Vertical bipolar transistor in combination with diodes
• CPC Class Codes: H01L 29/1008 of lateral transistors
• CPC Class Codes: H01L 29/40 Electrodes ; Multistep manufacturing processes therefor
• CPC Class Codes: H01L 29/42304 Base electrodes for bipolar transistors
• CPC Class Codes: H01L 29/73 Bipolar junction transistors
• CPC Class Codes: H01L 29/735 Lateral transistors
• CPC Class Codes: H01L 29/8611 Planar PN junction diodes

Abstract

Provided is a small-sized device for measuring an oxidation-reduction potential, whereby an oxidation-reduction current and an oxidation-reduction potential can be measured by reducing noise even when a signal from a solution being measured is small. A device for measuring an oxidation-reduction potential is provided with a substrate (10), a working electrode (15) mounted on a surface of the substrate (10), and a bipolar transistor (21) for amplifying the output of the working electrode (15) also provided on the surface of the substrate (10), and the signal amplified by the bipolar transistor (21) is inputted to a processing circuit (18).

Claims

1. A device for measuring oxidation-reduction potential, comprising:

a substrate;

a working electrode formed on a surface of the substrate; and

a processing circuit that processes an output of the working electrode;

wherein the substrate is provided with a bipolar transistor for amplifying the output of the working electrode.

2. The measuring device according to claim 1, further comprising a compensation circuit that applies a compensation current to the working electrode in a direction opposite to that of a current applied from the working electrode to the bipolar transistor.

3. The measuring device according to claim 2, wherein the compensation circuit includes a constant current circuit or a constant voltage circuit for shifting the current applied from the working electrode to a base of the bipolar transistor so that the bipolar transistor has a constant amplification factor.

4. The measuring device according to claim 2, wherein the compensation circuit is a rectifying semiconductor element arranged in parallel with the bipolar transistor between the working electrode and the processing circuit.

5. The measuring device according to claim 1, wherein an output of the bipolar transistor is converted to a shape identical to that of the output of the working electrode.

6. The measuring device according to claim 1, wherein a first doped region doped to be a first conductor type to form a collector region of the bipolar transistor, a second doped region doped to be a second conductor type within the first doped region to form a base region of the bipolar transistor, and a third doped region doped to be the first conductor type within the second doped region to form an emitter region of the bipolar transistor, are formed on the substrate, and wherein the working electrode is stacked upon the base region exposed on a surface of the substrate.

7. A method of measuring oxidation-reduction potential that uses a measuring device including a substrate, a working electrode arranged in a container formed on a surface of the substrate, a processing circuit that processes an output of the working electrode, and a bipolar transistor formed on the substrate to amplify the output of the working electrode, the measurement method comprising the steps of:

sweeping voltage applied to a counter electrode arranged opposite to the working electrode inside the container;

amplifying a current output from the working electrode with the bipolar transistor before the current is applied to the processing circuit; and

producing a compensation current that flows in a direction opposite to that of a current output from the working electrode to a base of the bipolar transistor in a case where a first potential is applied to the counter electrode, when a second potential different from the first potential is applied to the counter electrode.

8. The measurement method according to claim 7, further comprising the step of applying a shifting current to the current output from the working electrode to the base of the bipolar transistor so that the bipolar transistor has a constant amplification factor.