SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a memory circuit,wherein the semiconductor device is capable of storing a start-up routine in the memory circuit and executing the start-up routine,wherein the semiconductor device is capable of operating the memory circuit as the buffer memory device after executing the start-up routine,wherein the semiconductor device is capable of loading the start-up routine into the memory circuit from outside after operating the memory circuit as a buffer memory device and before the semiconductor device is powered off, andwherein the memory circuit comprises a memory element comprising a magnetic tunnel junction element.
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Accused Products
Abstract
A semiconductor device in which the area of a circuit that is not in use during normal operation can be reduced is provided. A semiconductor device including a memory circuit has a function of storing a start-up routine in the memory circuit and executing the start-up routine; a function of operating the memory circuit as a buffer memory device after executing the start-up routine; and a function of loading the start-up routine into the memory circuit from the outside before the semiconductor device is powered off. The memory circuit has a plurality of groups each including at least a first transistor, a second transistor, and a memory element including an MTJ element. The memory element has a function of storing a signal input through the first transistor. The second transistor has a function of being turned on or off in accordance with the signal stored in the memory elements.
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Citations
22 Claims
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1. A semiconductor device comprising:
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a memory circuit, wherein the semiconductor device is capable of storing a start-up routine in the memory circuit and executing the start-up routine, wherein the semiconductor device is capable of operating the memory circuit as the buffer memory device after executing the start-up routine, wherein the semiconductor device is capable of loading the start-up routine into the memory circuit from outside after operating the memory circuit as a buffer memory device and before the semiconductor device is powered off, and wherein the memory circuit comprises a memory element comprising a magnetic tunnel junction element. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a memory circuit, wherein the semiconductor device is capable of performing a first operation and performing a second operation, wherein the semiconductor device is capable of being powered off between the first operation and the second operation, wherein the semiconductor device is capable of storing a start-up routine of the semiconductor device in the memory circuit before the first operation, wherein the semiconductor device is capable of executing the start-up routine in the first operation, wherein the semiconductor device is capable of performing an operation based on a setting according to a data stored in the memory circuit in the second operation, and wherein the memory circuit comprises a memory element comprising a magnetic tunnel junction element. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a memory circuit, wherein the semiconductor device is capable of performing a first operation, being powered off, and then performing a second operation, wherein the semiconductor device is capable of performing an operation based on a first setting according to a data stored in the memory circuit in the first operation, wherein the semiconductor device is capable of storing a second setting of the semiconductor device in the memory circuit before the semiconductor device is powered off, wherein the semiconductor device is capable of executing a program for the second setting of the semiconductor device in the second operation, and wherein the memory circuit comprises a memory element comprising a magnetic tunnel junction element. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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Specification