NON-VOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION

• US 20150228346A1
• Filed: 10/24/2014
• Published: 08/13/2015
• Est. Priority Date: 02/13/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: CHOI, MYUNG-HOON, PARK, KI-TAE, IM, JAE-WOO
• Granted Patent: US 9,305,657 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/14 Circuits for erasing electrically, e.g. erase voltage switching circuits
• CPC Class Codes: G11C 16/16 for erasing blocks, e.g. arrays, words, groups
• CPC Class Codes: G11C 16/26 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 16/3459 Circuits or methods to verify correct programming of nonvolatile memory cells

Abstract

A non-volatile memory device receives a start command through a command line, receives an address through an address line, receives at least one setting value through the address line, receives a confirm command corresponding to the start command through the command line, sets at least one parameter of the non-volatile memory device as the setting value based on the start command, a number of the setting value, and the confirm command, and executes an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the set parameter.

Claims

1. A method of operating a non-volatile memory device, comprising:

receiving a start command through a command line;

receiving an address through an address line;

receiving at least one setting value through the address line;

receiving a confirm command corresponding to the start command through the command line;

setting at least one parameter of the non-volatile memory device as the setting value based on the start command, a number of the setting value, and the confirm command; and

executing an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the set parameter.

2. The method of claim 1, further comprising, where the start command is a program start command, receiving data that corresponds to the start command through a data line.

3. The method of claim 1, wherein setting the parameter of the non-volatile memory device as the setting value comprises setting the parameter of the non-volatile memory device as the setting value by accessing a parameter mapping table that maps the setting value and the parameter based on the start command, the number of the setting value, and the confirm command.

4. The method of claim 1, wherein setting the parameter of the non-volatile memory device as the setting value comprises:

setting a first read voltage level as a first setting value, setting a second read voltage level as a second setting value, and setting a third read voltage level as a third setting value, where the start command is a read start command, the confirm command is a read confirm command, the number of the setting value is 3, and the setting value includes the first setting value, the second setting value, and the third setting value.

5. The method of claim 1, wherein setting the parameter of the non-volatile memory device as the setting value comprises:

setting a read voltage level table number as a first setting value where the start command is a read start command, the confirm command is a read confirm command, the number of the setting value is 1, and the setting value comprises the first setting value.

6. The method of claim 1, wherein setting the parameter of the non-volatile memory device as the setting value comprises:

setting a program start voltage level of the non-volatile memory device as a first setting value, setting a program increasing voltage level of the non-volatile memory device as a second setting value, and setting a program verifying voltage level of the non-volatile memory device as a third setting value, where the start command is a program start command, the confirm command is a program confirm command, the number of the setting value is 3, and the setting value includes the first setting value, the second setting value, and the third setting value.

7. The method of claim 1, wherein setting the parameter of the non-volatile memory device as the setting value comprises:

setting an erase start voltage level of the non-volatile memory device as a first setting value, and setting a maximum erase loop number as a second setting value where the start command is an erase start command, the confirm command is an erase confirm command, the number of the setting value is 2, and the setting value comprises the first setting value, and the second setting value.

8. The method of claim 1, wherein the address comprises multiple first addresses that represent a row address of the non-volatile memory device, and multiple second addresses that represent a column address of the non-volatile memory device, where the start command is a read start command or a program start command.

9. The method of claim 1, wherein the non-volatile memory device is a NAND flash memory device.

10. A non-volatile memory device, comprising:

a memory cell array comprising multiple memory cells;

a controller comprising at least one parameter register configured to store at least one parameter, and configured to control operations of the memory cell array based on the parameter,

wherein the controller receives a start command and a confirm command through command line, receives an address and at least one setting value through an address line, stores the setting value as the parameter to the parameter register based on the start command, the confirm command, and a number of the setting value, and executes an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the parameter.

11. The non-volatile memory device of claim 10 further comprising:

a data input/output circuit configured to receive first data that corresponds to a read start command, from the memory cell array through a data line where the start command is the read start command, the data input/output circuit configured to transmit a second data that corresponds to a program start command, to the memory cell array through the data line where the start command is the program start command.

12. The non-volatile memory device of claim 10, wherein the controller further comprises a parameter mapping table that maps the setting value and the parameter based on the start command, the number of the setting value, and the confirm command.

13. The non-volatile memory device of claim 11, wherein the controller stores the setting value as the parameter in the parameter register based on the parameter mapping table.

14. The non-volatile memory device of claim 10, wherein, where the start command is a program start command, the controller receives data that corresponds to the start command through a data line.

15. The non-volatile memory device of claim 10, wherein the controller sets a first read voltage level as a first setting value, sets a second read voltage level as a second setting value, and sets a third read voltage level as a third setting value, where the start command is a read start command, the confirm command is a read confirm command, the number of the setting value is 3, and the setting value includes the first setting value, the second setting value, and the third setting value.

16. The non-volatile memory device of claim 10, wherein the controller sets a read voltage level table number as a first setting value where the start command is a read start command, the confirm command is a read confirm command, the number of the setting value is 1, and the setting value comprises the first setting value.

17. The non-volatile memory device of claim 10, wherein the controller sets a program start voltage level of the non-volatile memory device as a first setting value, sets a program increasing voltage level of the non-volatile memory device as a second setting value, and sets a program verifying voltage level of the non-volatile memory device as a third setting value, where the start command is a program start command, the confirm command is a program confirm command, the number of the setting value is 3, and the setting value includes the first setting value, the second setting value, and the third setting value.

18. The non-volatile memory device of claim 10, wherein the controller sets an erase start voltage level of the non-volatile memory device as a first setting value, and sets a maximum erase loop number as a second setting value where the start command is an erase start command, the confirm command is an erase confirm command, the number of the setting value is 2, and the setting value comprises the first setting value, and the second setting value.

19. The non-volatile memory device of claim 10, wherein the address comprises multiple first addresses that represent a row address of the non-volatile memory device, and multiple second addresses that represent a column address of the non-volatile memory device, where the start command is a read start command or a program start command.

20. The non-volatile memory device of claim 10, wherein the non-volatile memory device is a NAND flash memory device.