SEMICONDUCTOR STRUCTURES AND METHODS FOR MULTI-DIMENSION OF NANOWIRE DIAMETER TO IMPROVE DRIVE CURRENT
First Claim
1. A semiconductor device comprising:
- a drain region formed on a semiconductor substrate;
a nanowire structure formed between a source region and the drain region, the nanowire structure having a first diameter section joined with a second diameter section, the first diameter section being coupled to the drain region and having a diameter greater than the diameter of the second diameter section, the second diameter section coupled to the source region; and
a gate region formed around the junction at which the first diameter section and the second diameter section are joined.
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Abstract
A semiconductor device having a channel formed from a nanowire with a multi-dimensional diameter is provided. The semiconductor device comprises a drain region formed on a semiconductor substrate. The semiconductor device further comprises a nanowire structure formed between a source region and the drain region. The nanowire structure has a first diameter section joined with a second diameter section. The first diameter section is coupled to the drain region and has a diameter greater than the diameter of the second diameter section. The second diameter section is coupled to the source region. The semiconductor device further comprises a gate region formed around the junction at which the first diameter section and the second diameter section are joined.
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Citations
22 Claims
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1. A semiconductor device comprising:
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a drain region formed on a semiconductor substrate; a nanowire structure formed between a source region and the drain region, the nanowire structure having a first diameter section joined with a second diameter section, the first diameter section being coupled to the drain region and having a diameter greater than the diameter of the second diameter section, the second diameter section coupled to the source region; and a gate region formed around the junction at which the first diameter section and the second diameter section are joined. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of fabricating a semiconductor device comprising:
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forming a drain region on a semiconductor substrate; forming a nanowire structure between the drain region and a source region, the nanowire structure having a first diameter section joined with a second diameter section, the first diameter section coupled to the drain region and having a diameter greater than the diameter of the second diameter section, the second diameter section coupled to the source region; and forming a gate region around the junction at which the first diameter section and the second diameter section are joined. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A nanowire structure for use as a channel in a semiconductor device, the nanowire structure comprising:
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a first diameter section joined with a second diameter section, the first diameter section being coupled to a drain region in the semiconductor device and having a diameter greater than the diameter of the second diameter section, the second diameter section coupled to a source region in the semiconductor device; and wherein a gate region in the semiconductor device is formed around the junction at which the first diameter section and the second diameter section are joined. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A semiconductor device comprising:
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a drain region formed on a semiconductor substrate; a nanowire structure formed between the source region and a drain region, the nanowire structure having a tapered diameter section with a wider diameter section adjacent to one end and a narrower diameter section adjacent to another end, the wider diameter section being coupled to the drain region, the narrower diameter section coupled to the source region; and a gate region formed around a central portion of the tapered diameter section.
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22. A method of fabricating a semiconductor device comprising:
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forming a drain region on a semiconductor substrate; forming a nanowire structure between the drain region and a source region, the nanowire structure having a tapered diameter section with a wider diameter section adjacent to one end and a narrower diameter section adjacent to another end, the wider diameter section being coupled to the drain region, the narrower diameter section coupled to the source region; and forming a gate region around a central portion of the tapered diameter section.
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Specification