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METHODS OF FORMING CONTACTS TO SEMICONDUCTOR DEVICES USING A BOTTOM ETCH STOP LAYER AND THE RESULTING DEVICES

  • US 20150228776A1
  • Filed: 02/07/2014
  • Published: 08/13/2015
  • Est. Priority Date: 02/07/2014
  • Status: Abandoned Application
First Claim
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1. A method of forming a transistor above a semiconductor substrate, said transistor comprising a gate structure and an epitaxially formed semiconductor material in source/drain regions of said transistor, wherein the method comprises:

  • forming a patterned high-k etch stop layer above said epitaxially formed semiconductor material in said source/drain regions of said transistor;

    forming at least one layer of insulating material above said patterned high-k etch stop layer;

    performing at least one contact opening etching process to form at least one contact opening in said at least one layer of insulating material, wherein said patterned high-k etch stop layer acts as an etch stop during said at least one contact opening etching process;

    performing an etching process to remove portions of said patterned high-k etch stop layer exposed by said at least one contact opening; and

    forming a conductive contact in said at least one contact opening that is conductively coupled to said epitaxially formed semiconductor material in at least one of said source/drain regions of said transistor.

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