Handle Substrates of Composite Substrates for Semiconductors
First Claim
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1. A handle substrate of a composite substrate for a semiconductor;
- said handle substrate comprising a translucent ceramics,said handle substrate comprising a surface region on a side of a bonding face of said handle substrate, said surface region comprising pores having a size of 0.5 to 3.0 μ
m at an average density of 50 counts/mm2 or smaller, andsaid handle substrate comprising a region formed therein comprising pores having a size of 0.5 to 3.0 μ
m at an average density of 100 counts/mm2 or larger,wherein said translucent ceramics has an average grain size of 5 to 60 μ
m.
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Abstract
A handle substrate 1 is made of a translucent ceramics. An average density of pores having a size of 0.6 to 3.0 μm included in a surface region 2A on the side of a bonding face 1a of the handle substrate 1 is 50 counts/mm2 or smaller. It is formed a region 3, whose average density of pores having a size of 0.5 to 3.0 μm is 100 counts/mm2 or larger, in the handle substrate 1. The translucent ceramics has an average grain size of 5 to 60 μm.
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7 Claims
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1. A handle substrate of a composite substrate for a semiconductor;
- said handle substrate comprising a translucent ceramics,
said handle substrate comprising a surface region on a side of a bonding face of said handle substrate, said surface region comprising pores having a size of 0.5 to 3.0 μ
m at an average density of 50 counts/mm2 or smaller, andsaid handle substrate comprising a region formed therein comprising pores having a size of 0.5 to 3.0 μ
m at an average density of 100 counts/mm2 or larger,wherein said translucent ceramics has an average grain size of 5 to 60 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7)
- said handle substrate comprising a translucent ceramics,
Specification