SYNTHESIZING LOW MASK ERROR ENHANCEMENT FACTOR LITHOGRAPHY SOLUTIONS
First Claim
1. A source mask optimization (SMO) method comprising:
- controlling bright region efficiency during at least one optical domain step, the bright region efficiency being a proportion of a total transmitted light that is transferred to bright areas of a target pattern;
binarizing an optical domain intermediate solution provided by the at least one optical domain step to obtain an initial spatial domain solution with a controlled MEEF (Mask Error Enhancement Factor); and
controlling MEEF during at least one spatial domain step that optimizes the initial spatial domain solution.
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Abstract
In one embodiment, a source mask optimization (SMO) method is provided that includes controlling bright region efficiency during at least one optical domain step. The bright region efficiency being the proportion of the total transmitted light that is transferred to bright areas of a target pattern. The optical domain intermediate solution provided by the at least one optical domain step may then be binarized to obtain an initial spatial domain solution with a controlled MEEF (Mask Error Enhancement Factor). The MEEF is controlled during at least one spatial domain step that optimizes the initial spatial domain solution.
23 Citations
20 Claims
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1. A source mask optimization (SMO) method comprising:
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controlling bright region efficiency during at least one optical domain step, the bright region efficiency being a proportion of a total transmitted light that is transferred to bright areas of a target pattern; binarizing an optical domain intermediate solution provided by the at least one optical domain step to obtain an initial spatial domain solution with a controlled MEEF (Mask Error Enhancement Factor); and controlling MEEF during at least one spatial domain step that optimizes the initial spatial domain solution. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A non-transitory computer readable storage medium comprising a computer readable program for performing a source mask optimization (SMO) method, wherein the non-transitory computer readable program when executed on a computer causes the computer to perform the steps of:
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controlling bright region efficiency during at least one optical domain step, the bright region efficiency being a proportion of a total transmitted light that is transferred to bright areas of a target pattern; binarizing an optical domain intermediate solution provided by the at least one optical domain step to obtain an initial spatial domain solution with a controlled MEEF (Mask Error Enhancement Factor); and controlling MEEF during at least one spatial domain step that optimizes the initial spatial domain solution. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of patterning a semiconductor device comprising:
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providing a mask that has been produced using a source mask optimization process that includes controlling MEEF during at least one step of the source mask optimization; and patterning a photoresist layer using the mask. - View Dependent Claims (19, 20)
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Specification