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METHOD FOR PRODUCING SALICIDE AND A CARBON NANOTUBE METAL CONTACT

  • US 20150235958A1
  • Filed: 02/14/2014
  • Published: 08/20/2015
  • Est. Priority Date: 02/14/2014
  • Status: Active Grant
First Claim
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1. A method of producing a metal contact in a semiconductor device comprising:

  • depositing a catalyst layer in a via hole;

    forming a catalyst from the deposited catalyst layer;

    growing a carbon nanotube structure above the catalyst in the via hole;

    forming salicide from the catalyst;

    applying a chemical mechanical polishing (CMP) process to the carbon nanotube structure to remove top layers of catalyst and nanotube material; and

    depositing metal material above the carbon nanotube structure.

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