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INTEGRATED DEVICE COMPRISING STACKED DIES ON REDISTRIBUTION LAYERS

  • US 20150235988A1
  • Filed: 02/14/2014
  • Published: 08/20/2015
  • Est. Priority Date: 02/14/2014
  • Status: Active Grant
First Claim
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1. An integrated device comprising:

  • a dielectric layer configured as a base for the integrated device;

    a plurality of redistribution metal layers in the dielectric layer;

    a first wafer level die coupled to a first surface of the dielectric layer; and

    a second wafer level die coupled to the first wafer level die.

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