MAGNETIC MEMORY DEVICE USING IN-PLANE CURRENT AND ELECTRIC FIELD
First Claim
1. A magnetic memory device, comprising:
- a plurality of magnetic memory cells, each including a fixed magnetic layer, an insulating layer and a free magnetic layer;
wherein the magnetic memory device comprises a conductive wire provided adjacent to the free magnetic layer to apply an in-plane current to the magnetic memory cell;
a magnetic field provided to the magnetic memory cells; and
an element configured to independently supplying a voltage to each of the magnetic memory cells,wherein the fixed magnetic layer is a film having a fixed magnetization orientation and made of material magnetized in a direction perpendicular to a film surface,wherein the free magnetic layer is a film having a variable magnetization orientation and made of material magnetized in a direction perpendicular to a film surface, andwherein a magnetization orientation of each magnetic memory cell is selectively varied according to the applied in-plane current, the magnetic field provided to the magnetic memory cells, and the voltage supplied to each of the magnetic memory cells.
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Accused Products
Abstract
Provided is a magnetic memory device for applying an in-plane current to a conductive wire adjacent to a free magnetic layer having a perpendicular magnetic anisotropy to induce a flux reversal of the free magnetic layer and simultaneously applying a voltage to each magnetic tunnel junction cell selectively to reverse magnetization of the free magnetic layer selectively at each specific voltage. The magnetic memory device may implement high density integration by reducing a volume since a spin-hall spin-torque causing a flux reversal is generated at an interface of the conductive wire and the free magnetic layer, ensure thermal stability by enhancing perpendicular magnetic anisotropy of the magnetic layer, and reduce a critical current density by increasing an amount of spin current. In addition, by increasing tunnel magnetic resistance with a thick insulating body, the magnetic memory device may increase a reading rate without badly affecting the critical current density.
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Citations
16 Claims
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1. A magnetic memory device, comprising:
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a plurality of magnetic memory cells, each including a fixed magnetic layer, an insulating layer and a free magnetic layer; wherein the magnetic memory device comprises a conductive wire provided adjacent to the free magnetic layer to apply an in-plane current to the magnetic memory cell;
a magnetic field provided to the magnetic memory cells; and
an element configured to independently supplying a voltage to each of the magnetic memory cells,wherein the fixed magnetic layer is a film having a fixed magnetization orientation and made of material magnetized in a direction perpendicular to a film surface, wherein the free magnetic layer is a film having a variable magnetization orientation and made of material magnetized in a direction perpendicular to a film surface, and wherein a magnetization orientation of each magnetic memory cell is selectively varied according to the applied in-plane current, the magnetic field provided to the magnetic memory cells, and the voltage supplied to each of the magnetic memory cells. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification