OPTOELECTRONIC SEMICONDUCTOR CHIP, AND LIGHT SOURCE COMPRISING THE OPTOELECTRONIC SEMICONDUCTOR CHIP
First Claim
1. An optoelectronic semiconductor chip, comprising:
- a semiconductor layer sequence having at least two active regions arranged one above another, wherein the active regions each have a first semiconductor region of a first conduction type, a second semiconductor region of a second conduction type and a radiation-emitting active layer arranged between the first semiconductor region and the second semiconductor region,a radiation exit surface,a mirror layer, which is arranged at a side of the semiconductor layer sequence facing away from the radiation exit surface, andat least two electrical contacts, which are arranged at a side of the mirror layer facing away from the radiation exit surface.
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Accused Products
Abstract
An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified.
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Citations
18 Claims
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1. An optoelectronic semiconductor chip, comprising:
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a semiconductor layer sequence having at least two active regions arranged one above another, wherein the active regions each have a first semiconductor region of a first conduction type, a second semiconductor region of a second conduction type and a radiation-emitting active layer arranged between the first semiconductor region and the second semiconductor region, a radiation exit surface, a mirror layer, which is arranged at a side of the semiconductor layer sequence facing away from the radiation exit surface, and at least two electrical contacts, which are arranged at a side of the mirror layer facing away from the radiation exit surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. An optoelectronic semiconductor chip,
comprising: -
a semiconductor layer sequence having at least two active regions arranged one above another, wherein the active regions each have a first semiconductor region of a first conduction type, a second semiconductor region of a second conduction type and a radiation-emitting active layer arranged between the first semiconductor region and the second semiconductor region, a radiation exit surface, a mirror layer, which is arranged at a side of the semiconductor layer sequence facing away from the radiation exit surface, and at least two electrical contacts, which are arranged at a side of the mirror layer facing away from the radiation exit surface, a current spreading layer arranged between the mirror layer and the electrical contacts, said current spreading layer being electrically conductively connected to the second electrical contact, wherein the current spreading layer is insulated from the mirror layer by means of a first electrically insulating layer and is insulated from the first electrical contact by means of a second electrically insulating layer, and wherein the second electrical contact is electrically connected to the second semiconductor region of the active region closest to the radiation exit surface by means of a plurality of vias led in each case from the current spreading layer through the mirror layer and the semiconductor layer sequence.
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Specification